Thiwawong, Thutiyaporn

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Preferred name
Thiwawong, Thutiyaporn
Alternative Name
Thiwawong, T.
Main Affiliation
Email
thutiyaporn.th@kmitl.ac.th

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    Item type:Publication,
    Influence of Phase Structure of TiO2 Nanoparticles on Resistive Switching Devices
    (2024-01-03)
    Tunhoo, Benchapol
    ;
    Chantarawong, Direklit
    ;
    Thiwawong, Thutiyaporn
    ;
    Onlaor, Korakot
    In this work, the electrical memory properties of a bi-stable device based on the structure of aluminum/poly (9-vinyl carbazole) (PVK): TiO<inf>2</inf> NPs/indium-tin-oxide (ITO) were reported. The effects of the modified phase structural of titanium dioxide nanoparticles (TiO<inf>2</inf> NPs) on the electrical memory characteristics were determined. The TiO<inf>2</inf> NPs were annealed at different annealing temperatures. The physical properties of the annealed TiO<inf>2</inf> NPs were characterized by transmission electron microscope and X-ray diffraction, which revealed the composition and structure of the anatase and rutile phases. Current-voltage measurements showed that the bi-stable characteristics were affected by the phase structure of the TiO<inf>2</inf> NPs. The ON/OFF current ratio of the fabricated device was noted to be approximately 2.06×10<sup>5</sup> in the case of TiO<inf>2</inf> NPs annealed at 500°C. A theoretical model was used to explain the charge injection mechanisms of the device. Moreover, the temperature dependence and retention-time measurements of the device were demonstrated.
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    Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices
    (2022-12-01)
    Tunhoo, B.
    ;
    Kaewkusonwiwat, S.
    ;
    Thiwawong, T.
    ;
    Onlaor, K.
    We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties.