Onlaor, Korakot

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Onlaor, Korakot
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Onlaor, K.
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korakot.on@kmitl.ac.th

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    Impedance spectroscopy studies of DCM doped Alq3 organic material
    (2013-10-29)
    Keeratithiwakorn, P.
    ;
    Onlaor, K.
    ;
    Thiwawong, T.
    ;
    Tunhoo, B.
    In this work, we report on the frequency-impedance characteristics of dye-doped organic material. The device structure is glass substrate/indium tin oxide/DCM:Alq<inf>3</inf>/Aluminum 100 nm. The influence of doping concentraion has been investigated by impedance spectroscopy. The impedance characteristics of the dye-doped organic material can be modelled by simply adopting the conventional equivalent circuit with the simple combination of resistors and capacitor network. The variation of bulk resistance with applied bias voltage as a result of the Space Charge Limited Conduction (SCLC) mechanism for charge conduction. © (2013) Trans Tech Publications, Switzerland.
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    Electrical bistable properties of copper phthalocyanine at different deposition rates
    (2012-06-01)
    Onlaor, K.
    ;
    Tunhoo, B.
    ;
    Keeratithiwakorn, P.
    ;
    Thiwawong, T.
    ;
    Nukeaw, J.
    Organic bistable memory device is a next-generation of the electrical memory unit. In this paper, we report about the influence of structural properties on electrical bistable behavior of copper phthalocyanine organic memory device. Copper phthalocyanine (CuPc) layer was prepared by thermal evaporation technique at different deposition rates. When the deposition rate is increased, the film crystalline decreases and the surface morphology gradually changes from large flat grain to fine grain structure. Structural parameters such as the crystalline size of CuPc films and dislocation density can be calculated from XRD spectra. Moreover, the effect of deposition rate of CuPC layer on the bistable properties can be performed by current-voltage characteristics, retention measurement, impedance spectroscopy and temperature dependence measurement. The conduction mechanism in both ON and OFF states of the bistable device was analyzed by theoretical model, which can be proposed as a possible trap center of the carrier trapping and de-trapping process by structural defects in CuPc layer. Furthermore, the reliability issue such as cycling endurance and data retention is presented. © 2012 Elsevier Ltd. All rights reserved.