Sukwisute, Pisan

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Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition
(2022-06-15)
Khwansungnoen, Phalakorn
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Daichakomphu, Noppanut
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Sukwisute, Pisan
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Limsuwan, Pichet
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Somdock, Nuttakrit
Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering technique. The effects of varying the Sn content through a variable Sn target sputtering power and post annealing at 673 K were investigated. The DC power density applied to the GST target was controlled at 50 W, while the power density of the Sn target was increased from 0 W to 40 W. The results demonstrate the coexistence of the fcc-GST, hcp-GST and SnTe phases in the Sn-added GST thin films. The substitution of Sn at the Ge-site increases the crystallization speed and leads to defects and lattice disordered local arrangement in the GST films, causing the Seebeck coefficient to increase. The SnTe phase was created as a result of the high Sn content in the sample due to the over-doping limit of Sn into the GST structure. The presence of SnTe in Sn-doped GST films increased the electrical conductivity. The maximum power factor of 17.0 μW/cmK2 at 450 K was obtained at an Sn content of 14.7 at%. These results indicated that the thermoelectric properties of Sn-doped GST films were improved via the formation of an appropriate amount of SnTe composite.
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Energy-saving synthesis and β-phase enhancement of Cu2Se thermoelectric materials via the microwave hybrid heating technique
(2021-10-25)
Rudradawong, Chalermpol
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Sukwisute, Pisan
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Limsuwan, Pichet
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Harnwunggmoung, Adul
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Horprathum, Mati
Thermoelectric generators harvest energy from waste heat and convert it to electricity. β-Cu<inf>2</inf>Se is a candidate for them due to its outstanding thermoelectric properties and its environmentally friendly component elements. A microwave hybrid heating (MHH) method was used for the fast synthesis and enhancement of β-Cu<inf>2</inf>Se materials. The effects of the MHH reaction time on the phase microstructure and thermoelectric properties of the Cu<inf>2</inf>Se material were investigated, and the MHH method was compared with the conventional heating method. The X-ray diffraction patterns of samples, synthesized via the MHH method, showed monoclinic- (α) and cubic- (β) Cu<inf>2</inf>Se crystalline structures, whereas a single monoclinic-(α) structure was identified in a sample, synthesized via a conventional heating method. In addition, the β-Cu<inf>2</inf>Se phase was enhanced with increased MHH reaction time. The carrier concentration increased with β-Cu<inf>2</inf>Se content, which increased electrical conductivity and decreased the Seebeck coefficient. The Cu+ ions in the β-Cu<inf>2</inf>Se phase led to the reduced thermal conductivity. A low thermal conductivity of 0.86 W m−1 K−1 and a maximum dimensionless figure of merit of 0.32 at 523 K were realized for 10 min MHH sample. Finally, MHH showed very low energy consumption and saved time, which are essential for industrialization.
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Triboelectric Nanogenerator Prepared from Poly(vinylidene Fluoride-Hexafluoropropylene) Polymer Composite
(2023-01-01)
Wannarumon, Pattarasuda
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Limsuwan, Pichet
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Sukwisute, Pisan
;
Somdock, Nuttakrit
In this work, poly(vinylidene fluoride-hexafluoropropylene)/reduced graphene oxide films were prepared by the solution casting method with N,N-dimethylformamide (DMF) and DMF/acetone mixed solvents. The effects of reduced graphene oxide and solvent type on the morphology and crystal structure of the composite films were investigated by using scanning electron microscopy, Fourier-transform infrared spectroscopy, and Raman spectroscopy, respectively. The morphology study showed that the addition of acetone in the film process resulted in the occurrence of tiny pores on the film surfaces. The reduced graphene oxide incorporated into the PVDF-HFP was able to promote the formation of β- phase in the composites. The maximum power of 15.58 µW was obtained from the films using DMF/acetone mixture as solvent.
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Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target
(2021-11-01)
Theekhasuk, Nattharika
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Sakdanuphab, Rachsak
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Nuthongkum, Pilaipon
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Pluengphon, Prayoonsak
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Harnwunggmoung, Adul
Thick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10−3 W/mK2 at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.

Sukwisute, Pisan

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