Sukwisute, Pisan

Preferred name

Sukwisute, Pisan

Alternative Name

Sukwisute, P.

Main Affiliation

School of Science

pisan.su@kmitl.ac.th

Now showing 1 - 10 of 13

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Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target
(2021-11-01)
Theekhasuk, Nattharika
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Sakdanuphab, Rachsak
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Nuthongkum, Pilaipon
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Pluengphon, Prayoonsak
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Harnwunggmoung, Adul
Thick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10−3 W/mK2 at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.
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Excited Discrete Force for Piezo Generator Undergone Ultra-Low Vibrations on Air-Compressor and Possible Application
(2019-04-22)
Thainiramit, Panu
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Wahab, Yufridin
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Techato, Kua Anan
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Sukwisute, Pisan
;
Muensit, Nantakan
The number of residential buildings in many countries has been fast growing. Comfortable furniture and smart peripheral devices become common for well living in daily life. For example, an electronic wireless switch could be controlled via a mobile phone to open or close home appliances (i.e. light, air-conditioner, security and alarm system), it is so-called »Home Appliances Control». This paper demonstrated a simple-wireless standalone system for the case of the receiver module attached to the compressor unit of the conventional air conditioner. This research proposed an air-compressor as a source of discrete excitations and employed a conventional buzzer as a transducer. The vibration is harvested its mechanical energy to electricity by using a cantilever-type structure glued with the piezoelectric buzzer. The output energy is stored in capacitors thus being consequent as a miniature generator; then, the transmitted data is received by a wireless receiver from the remote transmitter. These result confirmed that the simple cantilever could act as a charger for the connected capacitors which was subsequently an energy source to feed wireless units. In this work, a running air-conditioner produced a charging cycle to capacitors of 3,150 μF within 1 hour. This is sufficient to send and receive the data of atmospheric temperature around the building. This application is useful as a warning sign for inhabitants.
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Effects of the electric field and AlCl 3 ⋅6H 2 O salt on the crystal, morphology and dielectric properties of P(VDF-HFP) fibres
(2018-12-19)
Sukwisute, P.
;
Yuennan, J.
;
Muensit, N.
This research aims to prepare the polyvinylidene fluoride-hexafluoropropylene (P(VDF-HFP)) fibres by electrospinning process with different electric fields. The aluminium chloride hexahydrate (AlCl <inf>3</inf> ⋅6H <inf>2</inf> O) was filled into the fibres to act as a nucleating agent for β phase transformation. The morphology and phase transformation of the neat fibre mats with and without AlCl <inf>3</inf> ⋅6H <inf>2</inf> O were investigated by scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the average diameter of fibres decreases with increasing electric field. The diameter of composite fibres becomes smaller compared to that of the pure P(VDF-HFP) fibre. The β phase fraction of fibre mats increases due to the applied electric field and AlCl <inf>3</inf> ⋅6H <inf>2</inf> O filler. Moreover, an improvement of dielectric constant is found in the composite fibres, suggesting for mechanical sensors.
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Effect of hydrated salts on the microstructure and phase transformation of poly(vinylidenefluoride-hexafluoropropylene) composites
(2018-05-01)
Yuennan, Jureeporn
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Sukwisute, Pisan
;
Muensit, Nantakan
The present work has investigated a means of fabricating porous, β phase P(VDF-HFP) film by adding two kinds of hydrated metal salts. Without the use of mechanical stretching or electrical poling treatments, MgCl<inf>2</inf> •6H<inf>2</inf>O and AlCl<inf>3</inf> •6H<inf>2</inf>O are found to induce the formation of β phase crystals in porous film derived from the solution casting method. Trivalent Al ions have been found to effectively promote the self-oriented β phase of the P(VDF-HFP) film greater than divalent Mg ions. The overall β content is achieved about 38% and 42% for adding 0.25 wt% Mg- and Al-salts, respectively. The average pore sizes and surface roughness of porous P(VDF-HFP) films are increased with increasing salt concentration. The dielectric constant of about 5 for pure P(VDF-HFP) film (at 100 Hz) has been boosted up to 13-19 when adding the salts. In addition, the P(VDF-HFP) films filled with Al-salt exhibit the largest piezoelectric coefficient of 20 pC/N. Thus, the modified polymers are one of candidate materials for using in dielectric and piezoelectric applications.
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Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures
(2017-05-01)
Khumtong, T.
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Sukwisute, P.
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Sakulkalavek, A.
;
Sakdanuphab, R.
The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) thin films have been investigated for thermoelectric applications. Sb<inf>2</inf>Te<inf>3</inf> thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb<inf>2</inf>Te<inf>3</inf> target using different sputtering pressures in the range from 4 × 10−3 mbar to 1.2 × 10−2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb<inf>2</inf>Te<inf>3</inf> films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm−1, 6.38 × 1019 cm−3, and 3.67 cm2 V−1 s−1, respectively. The maximum power factor of 1.07 × 10−4 W m−1 K−2 was achieved for the film deposited at sputtering pressure of 1.0 × 10−2 mbar.
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Hardness and wear resistance improvement of ABS surface by CrN thin film
(2017-01-01)
Sukwisute, P.
;
Sakdanuphab, R.
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Sakulkalavek, A.
This work aims to investigate the effect of sputtering power on the hardness and wear resistance of chromium nitride (CrN) thin films deposited on the acrylonitrile butadiene styrene (ABS) substrates. These coatings were performed by a reactive DC magnetron sputtering technique. The values of sputtering power were adjusted in the range of 125-200 W. The total pressure (P<inf>t</inf>), nitrogen partial pressure (P<inf>N2</inf>), and sputtering time were kept constant at 4×10-3 mbar, 30%, and 120 min, respectively. The surface roughness of the thin films was characterized by atomic force microscopy (AFM). The crystalline structure of these CrN thin films was studied using X-ray diffraction (XRD). The hardness and Young's modulus of the CrN coated ABS samples were analyzed by a nanoindentation hardness test. Wear resistance tests under ambient air condition at room temperature were carried out by pin-on-disc method. The wear scars of the samples were determined by scanning electron microscope (SEM). The results showed that the hardness values were varied from 6.65 to 9.58 GPa. Young's modulus of the samples was changed from 30.87 to 44.25 GPa. The CrN coating deposited on the ABS substrate at 175 W exhibited the highest hardness of 9.58 GPa which value is as high as that of steel. This indicated its potential and promising applications as hard coating layers for ABS plastic parts.
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Energy conversion capacity of barium zirconate titanate
(2020-01-01)
Binhayeeniyi, Nawal
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Sukwisute, Pisan
;
Nawae, Safitree
;
Muensit, Nantakan
In this study, we investigated the effect of zirconium content on lead-free barium zirconate titanate (BZT) (Ba(Zr<inf>x</inf>Ti<inf>1-x</inf>)O<inf>3</inf>, with x = 0.00, 0.01, 0.03, 0.05, and 0.08), which was prepared by the sol-gel method. A single-phase perovskite BZT was obtained under calcination and sintering conditions at 1100 °C and 1300 °C. Ferroelectric measurements revealed that the Curie temperature of BaTiO<inf>3</inf> was 399 K, and the transition temperature decreased with increasing zirconium content. At the Curie temperature, Ba(Zr<inf>0.03</inf>Ti<inf>0.97</inf>)O<inf>3</inf> with a dielectric constant of 19,600 showed the best performance in converting supplied mechanical vibration into electrical power. The experiments focused on piezoelectric activity at a low vibrating frequency, and the output power that dissipated from the BZT system at 15 Hz was 2.47 nW (30 MΩ). The prepared lead-free sol-gel BZT is promising for energy-harvesting applications considering that the normal frequencies of ambient vibration sources are less than 100 Hz.
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Phase Transformation, Surface Morphology and Dielectric Property of P(VDF-HFP)/MgCl2•6H2O Nanocomposites
(2017-10-20)
Yuennan, J.
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Sukwisute, P.
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Boripet, B.
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Muensit, N.
Nanocomposite piezoelectric films based on the blend of poly(vinylidenefluoride-hexafluoropropylene) (PVDF-HFP) and magnesium chloride hexahydrate (MgCl<inf>2</inf>•6H<inf>2</inf>O) have been investigated in this work. The films incorporated with 0.5 wt% MgCl<inf>2</inf>•6H<inf>2</inf>O were prepared using a solution casting technique and uniaxially stretched at various ratios from 2 to 6 times in order to characterize phase transformation, surface morphology and dielectric behaviour. The piezoelectric β phase transformation and crystallinity of the stretched films were identified by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). A scanning electron microscopy (SEM) was conducted to observe the surface microstructure and porosity. The frequency dependence of dielectric properties was also measured by LCR meter at room temperature. The stretched films show the larger the stretching ratio, the greater the microdefects appearance. This leads to a decrease of dielectric constant with stretching ratio. Nevertheless, the P(VDF-HFP) nanocomposites with stretching ratio of 4 times display a higher β phase fraction of 90% than the unstretched films. Thus, this result points out that the β phase transformation of the composite films can be enhanced by mechanically stretching process.
1
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Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition
(2022-06-15)
Khwansungnoen, Phalakorn
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Daichakomphu, Noppanut
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Sukwisute, Pisan
;
Limsuwan, Pichet
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Somdock, Nuttakrit
Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering technique. The effects of varying the Sn content through a variable Sn target sputtering power and post annealing at 673 K were investigated. The DC power density applied to the GST target was controlled at 50 W, while the power density of the Sn target was increased from 0 W to 40 W. The results demonstrate the coexistence of the fcc-GST, hcp-GST and SnTe phases in the Sn-added GST thin films. The substitution of Sn at the Ge-site increases the crystallization speed and leads to defects and lattice disordered local arrangement in the GST films, causing the Seebeck coefficient to increase. The SnTe phase was created as a result of the high Sn content in the sample due to the over-doping limit of Sn into the GST structure. The presence of SnTe in Sn-doped GST films increased the electrical conductivity. The maximum power factor of 17.0 μW/cmK2 at 450 K was obtained at an Sn content of 14.7 at%. These results indicated that the thermoelectric properties of Sn-doped GST films were improved via the formation of an appropriate amount of SnTe composite.
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Energy-saving synthesis and β-phase enhancement of Cu2Se thermoelectric materials via the microwave hybrid heating technique
(2021-10-25)
Rudradawong, Chalermpol
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Sukwisute, Pisan
;
Limsuwan, Pichet
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Harnwunggmoung, Adul
;
Horprathum, Mati
Thermoelectric generators harvest energy from waste heat and convert it to electricity. β-Cu<inf>2</inf>Se is a candidate for them due to its outstanding thermoelectric properties and its environmentally friendly component elements. A microwave hybrid heating (MHH) method was used for the fast synthesis and enhancement of β-Cu<inf>2</inf>Se materials. The effects of the MHH reaction time on the phase microstructure and thermoelectric properties of the Cu<inf>2</inf>Se material were investigated, and the MHH method was compared with the conventional heating method. The X-ray diffraction patterns of samples, synthesized via the MHH method, showed monoclinic- (α) and cubic- (β) Cu<inf>2</inf>Se crystalline structures, whereas a single monoclinic-(α) structure was identified in a sample, synthesized via a conventional heating method. In addition, the β-Cu<inf>2</inf>Se phase was enhanced with increased MHH reaction time. The carrier concentration increased with β-Cu<inf>2</inf>Se content, which increased electrical conductivity and decreased the Seebeck coefficient. The Cu+ ions in the β-Cu<inf>2</inf>Se phase led to the reduced thermal conductivity. A low thermal conductivity of 0.86 W m−1 K−1 and a maximum dimensionless figure of merit of 0.32 at 523 K were realized for 10 min MHH sample. Finally, MHH showed very low energy consumption and saved time, which are essential for industrialization.
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Sukwisute, Pisan

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