Sukwisute, Pisan

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Sukwisute, Pisan
Alternative Name
Sukwisute, P.
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Email
pisan.su@kmitl.ac.th

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    Item type:Publication,
    Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target
    (2021-11-01)
    Theekhasuk, Nattharika
    ;
    Sakdanuphab, Rachsak
    ;
    Nuthongkum, Pilaipon
    ;
    Pluengphon, Prayoonsak
    ;
    Harnwunggmoung, Adul
    Thick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10<sup>−3</sup> W/mK<sup>2</sup> at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.
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    Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures
    (2017-05-01)
    Khumtong, T.
    ;
    Sukwisute, P.
    ;
    Sakulkalavek, A.
    ;
    Sakdanuphab, R.
    The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) thin films have been investigated for thermoelectric applications. Sb<inf>2</inf>Te<inf>3</inf> thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb<inf>2</inf>Te<inf>3</inf> target using different sputtering pressures in the range from 4 × 10<sup>−3</sup> mbar to 1.2 × 10<sup>−2</sup> mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb<inf>2</inf>Te<inf>3</inf> films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm<sup>−1</sup>, 6.38 × 10<sup>19</sup> cm<sup>−3</sup>, and 3.67 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, respectively. The maximum power factor of 1.07 × 10<sup>−4</sup> W m<sup>−1</sup> K<sup>−2</sup> was achieved for the film deposited at sputtering pressure of 1.0 × 10<sup>−2</sup> mbar.