Somdock, Nuttakrit

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Somdock, Nuttakrit
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nuttakrit.so@kmitl.ac.th

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    Item type:Publication,
    Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition
    (2022-06-15)
    Khwansungnoen, Phalakorn
    ;
    Daichakomphu, Noppanut
    ;
    Sukwisute, Pisan
    ;
    Limsuwan, Pichet
    ;
    Somdock, Nuttakrit
    Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering technique. The effects of varying the Sn content through a variable Sn target sputtering power and post annealing at 673 K were investigated. The DC power density applied to the GST target was controlled at 50 W, while the power density of the Sn target was increased from 0 W to 40 W. The results demonstrate the coexistence of the fcc-GST, hcp-GST and SnTe phases in the Sn-added GST thin films. The substitution of Sn at the Ge-site increases the crystallization speed and leads to defects and lattice disordered local arrangement in the GST films, causing the Seebeck coefficient to increase. The SnTe phase was created as a result of the high Sn content in the sample due to the over-doping limit of Sn into the GST structure. The presence of SnTe in Sn-doped GST films increased the electrical conductivity. The maximum power factor of 17.0 μW/cmK<sup>2</sup> at 450 K was obtained at an Sn content of 14.7 at%. These results indicated that the thermoelectric properties of Sn-doped GST films were improved via the formation of an appropriate amount of SnTe composite.