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    Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition
    (2022-06-15)
    Khwansungnoen, Phalakorn
    ;
    Daichakomphu, Noppanut
    ;
    ; ;
    Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering technique. The effects of varying the Sn content through a variable Sn target sputtering power and post annealing at 673 K were investigated. The DC power density applied to the GST target was controlled at 50 W, while the power density of the Sn target was increased from 0 W to 40 W. The results demonstrate the coexistence of the fcc-GST, hcp-GST and SnTe phases in the Sn-added GST thin films. The substitution of Sn at the Ge-site increases the crystallization speed and leads to defects and lattice disordered local arrangement in the GST films, causing the Seebeck coefficient to increase. The SnTe phase was created as a result of the high Sn content in the sample due to the over-doping limit of Sn into the GST structure. The presence of SnTe in Sn-doped GST films increased the electrical conductivity. The maximum power factor of 17.0 μW/cmK<sup>2</sup> at 450 K was obtained at an Sn content of 14.7 at%. These results indicated that the thermoelectric properties of Sn-doped GST films were improved via the formation of an appropriate amount of SnTe composite.
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    Sputter-deposited AlN coatings for enhanced tarnish resistance and mechanical durability of silver jewelry
    Silver jewelry is prone to surface tarnishing caused by sulfur-containing species in ambient environments. In this study, a transparent aluminum nitride–based thin film was deposited by magnetron sputtering and evaluated as a protective barrier against silver tarnishing. Sheets of 99.9% pure silver were coated under various nitrogen flow conditions to optimize film composition and performance. An appropriate nitrogen flow rate of 25 standard cubic centimeters per minute (sccm), corresponding to an N₂/Ar gas ratio of approximately 1:1, was identified for forming AlN-rich films, while an AlN-based film thickness in the range of 80–110 nm was found to be suitable for jewelry protection. X-ray photoelectron spectroscopy analysis showed that insufficient nitrogen availability suppresses complete nitridation, resulting in residual metallic aluminum, which readily reacts with residual oxygen and moisture, increasing the oxygen content in the films. At an N₂ flow rate of 25 sccm, metallic aluminum was suppressed and the films were dominated by Al–N bonding with minor oxygen incorporation, accompanied by the development of a polycrystalline structure. Nanoindentation measurements performed on the 110 nm-thick film yielded a peak hardness of approximately 3.6 GPa, indicating enhanced mechanical durability compared with uncoated silver. Comparative evaluation of color difference, mechanical hardness, tarnish resistance, and environmental durability demonstrated improved performance of the AlN-coated silver. Finally, the practical applicability of the coating was demonstrated by depositing AlN-based films onto large and intricately designed silver jewelry items, indicating compatibility with industrial-scale processing.