Somdock, Nuttakrit
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Item type:Publication, Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition(2022-06-15); ; Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering technique. The effects of varying the Sn content through a variable Sn target sputtering power and post annealing at 673 K were investigated. The DC power density applied to the GST target was controlled at 50 W, while the power density of the Sn target was increased from 0 W to 40 W. The results demonstrate the coexistence of the fcc-GST, hcp-GST and SnTe phases in the Sn-added GST thin films. The substitution of Sn at the Ge-site increases the crystallization speed and leads to defects and lattice disordered local arrangement in the GST films, causing the Seebeck coefficient to increase. The SnTe phase was created as a result of the high Sn content in the sample due to the over-doping limit of Sn into the GST structure. The presence of SnTe in Sn-doped GST films increased the electrical conductivity. The maximum power factor of 17.0 μW/cmK<sup>2</sup> at 450 K was obtained at an Sn content of 14.7 at%. These results indicated that the thermoelectric properties of Sn-doped GST films were improved via the formation of an appropriate amount of SnTe composite. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Graphene addition improved figure of merit in SnTe prepared by the rapid hybrid microwave solid-state method(2022-02-01); ; ; We successfully synthesised SnTe-based powders (SnTe, Sn<inf>0.95</inf>Bi<inf>0.05</inf>Te, and SnTe with graphene addition) by a hybrid microwave solid-state method. This demonstrated comparable thermoelectric performance to the conventional heating method but had low energy consumption and rapid synthesis. Graphene addition to SnTe materials resulted in significant reduction of thermal conductivity. The SnTe with 5 wt% graphene exhibited a reduction in overall thermal conductivity from ∼10 W m<sup>−1</sup> K<sup>−1</sup> for SnTe to ∼2 W m<sup>−1</sup> K<sup>−1</sup> at 325 K and showed a moderate power factor. The Debye model was used to explain the origin of the effects of graphene on lattice thermal conductivity. The dimensionless figure of merit was increased by five times, from 0.07 for SnTe to 0.35 for SnTe with 5 wt% graphene. Our results demonstrated an effective method and additive material to synthesise and enhance the thermoelectric properties of SnTe materials.