Promros, Nathaporn

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Promros, Nathaporn
Alternative Name
Promros, N.
Main Affiliation
Email
nathaporn.pr@kmitl.ac.th

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    Item type:Publication,
    Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions
    (2018-01-01)
    Sittimart, Phongsaphak
    ;
    Nopparuchikun, Adison
    ;
    Onsee, Peeradon
    ;
    Duangrawa, Asanlaya
    ;
    Teakchaicum, Sakmongkon
    The current density-voltage curves of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/p-type silicon heterojunctions were measured and analyzed at different temperatures. Based on computation using TE theory, the ideality factor values were 1.12 at 300 K and 5.44 at 80 K. The barrier height values were 0.69 eV at 300 K and 0.20 eV at 80 K. These parameters are in agreement with those computed using Chueng's and Norde's methods. The series resistance (R<inf>s</inf>) computed by Chueng's method were 300.88 Ω at 300 K and 4.29 MΩ at 80 K. These R<inf>s</inf> values are equal to those computed using Norde's method.