Promros, Nathaporn

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Promros, Nathaporn
Alternative Name
Promros, N.
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Email
nathaporn.pr@kmitl.ac.th

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    Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition
    (2017-09-01)
    Nopparuchikun, Adison
    ;
    Promros, Nathaporn
    ;
    Sittimart, Phongsaphak
    ;
    Onsee, Peeradon
    ;
    Duangrawa, Asanlaya
    By utilizing pulsed laser deposition (PLD), heterojunctions comprised of n-type nanocrystalline (NC) FeSi<inf>2</inf>/ thin films and p-type Si substrates were fabricated at room temperature in this study. Both dark and illuminated current density-voltage (J-V ) curves for the heterojunctions were measured and analyzed at room temperature. The heterojunctions demonstrated a large reverse leakage current as well as a weak near-infrared light response. Based on the analysis of the dark forward J-V curves, at the V value ≤ 0.2 V, we show that a carrier recombination process was governed at the heterojunction interface. When the V value was > 0.2 V, the probable mechanism of carrier transportation was a space-charge limitedcurrent process. Both the measurement and analysis for capacitance-voltage-frequency (C-V-f ) and conductance-voltage-frequency (G-V-f ) curves were performed in the applied frequency ( f ) range of 50 kHz-2 MHz at room temperature. From the C-V-f and G-V-f curves, the density of interface states (Nss) for the heterojunctions was computed by using the Hill-Coleman method. The Nss values were 9.19 × 10<sup>12</sup> eV<sup>-1</sup> cm<sup>-2</sup> at 2 MHz and 3.15 × 10<sup>14</sup> eV<sup>-1</sup> cm<sup>-2</sup> at 50 kHz, which proved the existence of interface states at the heterojunction interface. These interface states are the probable cause of the degraded electrical performance in the heterojunctions.
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    Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering
    (2017-06-01)
    Nopparuchikun, Adison
    ;
    Promros, Nathaporn
    ;
    Teakchaicum, Sakmongkon
    ;
    Onsee, Peeradon
    ;
    Duangrawa, Asanlaya
    Heterojunctions composed of n-type β-FeSi<inf>2</inf> thin films and p-type Si(111) substrates were formed by radio frequency magnetron sputtering at an Ar pressure of 2.66 × 10<sup>−1</sup> Pa at a substrate temperature of 560 °C. The current density–voltage (J–V) curves of the heterojunctions measured in the dark and under illumination at room temperature showed a large leakage current under reverse bias conditions and a weak response to near-infrared (NIR) light irradiation. From the results of the analysis of dark forward J–V curves, the dominant carrier transport mechanisms at V ≤ 0.15 V and V > 0.15 V were considered a recombination process and a space-charge-limited current process, respectively. Both capacitance–voltage and conductance–voltage characteristics at room temperature were measured and analyzed as a function of applied frequency (f) ranging from 20 kHz to 2 MHz in order to estimate the series resistance (R<inf>s</inf>) by the Nicollian–Brews method. R<inf>s</inf> was estimated as 77.79 Ω at 20 kHz. It decreased to 14.16 Ω at 2 MHz, which is expected because the charges at the interface states cannot follow the AC signal at high f values.
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    Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering
    (2017-06-01)
    Nopparuchikun, Adison
    ;
    Promros, Nathaporn
    ;
    Teakchaicum, Sakmongkon
    ;
    Onsee, Peeradon
    ;
    Duangrawa, Asanlaya
    Heterojunctions composed of n-type β-FeSi<inf>2</inf> thin films and Ρ-type Si(111) substrates were formed by radio frequency magnetron sputtering at an Ar pressure of 2.66 x10<inf>-1</inf> Pa at a substrate temperature of 560 °C. The current density-voltage (J-V) curves of the heterojunctions measured in the dark and under illumination at room temperature showed a large leakage current under reverse bias conditions and a weak response to nearinfrared (NIR) light irradiation. From the results of the analysis of dark forward J-V curves, the dominant carrier transport mechanisms at V : 0.15V and V > 0.15V were considered a recombination process and a space-charge-limited current process, respectively. Both capacitance-voltage and conductance-voltage characteristics at room temperature were measured and analyzed as a function of applied frequency ( f ) ranging from 20 kHz to 2MHz in order to estimate the series resistance (Rs) by the Nicollian-Brews method. Rs was estimated as 77.79Ω at 20 kHz. It decreased to 14.16Ω at 2 MHz, which is expected because the charges at the interface states cannot follow the AC signal at high f values.
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    Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions
    (2018-01-01)
    Sittimart, Phongsaphak
    ;
    Nopparuchikun, Adison
    ;
    Onsee, Peeradon
    ;
    Duangrawa, Asanlaya
    ;
    Teakchaicum, Sakmongkon
    The current density-voltage curves of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/p-type silicon heterojunctions were measured and analyzed at different temperatures. Based on computation using TE theory, the ideality factor values were 1.12 at 300 K and 5.44 at 80 K. The barrier height values were 0.69 eV at 300 K and 0.20 eV at 80 K. These parameters are in agreement with those computed using Chueng's and Norde's methods. The series resistance (R<inf>s</inf>) computed by Chueng's method were 300.88 Ω at 300 K and 4.29 MΩ at 80 K. These R<inf>s</inf> values are equal to those computed using Norde's method.