Promros, Nathaporn

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Promros, Nathaporn
Alternative Name
Promros, N.
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Email
nathaporn.pr@kmitl.ac.th

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    Investigation into the impedance, dielectric behavior, and conductivity within p-silicon/n-nanocrystalline iron disilicide heterojunctions and equivalent circuit model in relation to temperature
    (2025-03-15)
    Borwornpornmetee, Nattakorn
    ;
    Sittimart, Phongsaphak
    ;
    Traiprom, Thawichai
    ;
    Paosawatyanyong, Boonchoat
    ;
    Yoshitake, Tsuyoshi
    The p-Si/n-nanocrystalline FeSi<inf>2</inf> heterojunctions constructed through facing-targets sputtering were characterized for impedance under various frequencies and temperatures of between 160−400 K. Imaginary and real impedance plots for all temperatures demonstrated single semicircular arc with negative temperature dependency. From the arc, a circuit model equivalent to electrode resistance serially connected to several loops, each consisting of a parallel circuit comprising a resistance//constant phase element (Q), corresponding to the crystallite, crystallite boundary, and interface. All resistances increased with decreasing temperatures, while the Q values decreased but behaved as ideal capacitors for all temperatures. The dielectric constants versus increasing temperature demonstrated a linear increase. At 300 K and 1 MHz, the dielectric constant was 24.5 with 0.1 loss tangent, denoting its possible usage for filtration and storage. The alternating-current conductivities disclosed that direct-current conductivities increased as the temperature increased. The exponents from Jonscher's fit were 1 or less around 180 K and the values beyond 1 at higher temperatures, indicating the shift from long transitional transport to localized hopping transport. The activation energy based on conductivities was higher than the one based on relaxation times, implying that excess charge led to more energy requirements for transportation.
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    Photodetection characteristics of heterojunctions comprising p-type ultrananocrystalline diamond films and n-type Si substrates at low temperatures
    (2017-01-01)
    Hanada, Takanori
    ;
    Ohmagari, Shinya
    ;
    Zkria, Abdelrahman
    ;
    Promros, Nathaporn
    ;
    Yoshitake, Tsuyoshi
    0.06 at.% boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on n-type Si substrates by pulsed laser deposition, and the resultant heterojunctions were evaluated as photodiodes in the deep-ultraviolet range. The rectifying action of the heterojunctions were improved accompanied by a reduction in the leakage current with decreasing temperature. The leakage current was decreased by more than three orders of magnitude at 60 K as compared with that at 300 K. Although the detectivity for 254 nm monochromatic light was gradually enhanced with decreasing temperature, the illumination current at reverse voltages was decreased along with the decrease in the leakage current. This might be because a spike due to a heterojunction band offset gets higher in the conduction band at low temperatures and it act as a barrier for photogenerated electrons flowing from the UNCD/a-C:H film to the Si substrate.
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    Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions
    (2018-01-01)
    Sittimart, Phongsaphak
    ;
    Nopparuchikun, Adison
    ;
    Onsee, Peeradon
    ;
    Duangrawa, Asanlaya
    ;
    Teakchaicum, Sakmongkon
    The current density-voltage curves of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/p-type silicon heterojunctions were measured and analyzed at different temperatures. Based on computation using TE theory, the ideality factor values were 1.12 at 300 K and 5.44 at 80 K. The barrier height values were 0.69 eV at 300 K and 0.20 eV at 80 K. These parameters are in agreement with those computed using Chueng's and Norde's methods. The series resistance (R<inf>s</inf>) computed by Chueng's method were 300.88 Ω at 300 K and 4.29 MΩ at 80 K. These R<inf>s</inf> values are equal to those computed using Norde's method.