Parnklang, Jirawath

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Parnklang, Jirawath
Alternative Name
Parnklang, J.
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Email
jirawath.par@kmitl.ac.th

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    Subthreshold operation of MOIS devices: Boundary of operation
    (2000-12-01)
    Parnklang, Jirawath
    ;
    Jindajitawat, Phumin
    ;
    Titiroongruang, Wisut
    The boundary of MOIS operating in subthreshold are presented on this article. The MOS transistor-like structure is MOIS (Complementary Metal Oxide Intrinsic-like Semiconductor, MOIS), which prepared on gold-doped silicon. In this condition causes to change many essential characteristics of the device. We demonstrate the analytical parameters and the experimental result of the device which use to determine the subthreshold regime.
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    Multiplier and divider circuit base on CMOS current controlled current conveyors
    (2001-12-01)
    Parnklang, Jirawath
    ;
    Moltaweepaisan, Teerasith
    ;
    Nunthanawanich, Witsarut
    In this title, the simple current mode analogue multiplier/divider circuit which use only two circuit block diagram of Second Generation Current Controlled Current Conveyors Circuit (CCCII) is presented. No resistor and no capacitor are required in this multiplier and divider circuit. This circuit can perform multiplication and division the input current without changing its topology. The simulation and the implemented circuit results obtained using SPICE simulation and MCI4007 transistor array respectively are included.
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    Current gain of bipolar transistor in the IGBT measurement
    (2000-12-01)
    Parnklang, Jirawath
    ;
    Niemcharoen, Surasak
    ;
    Yardsamer, Saranya
    The common emitter current gain (β<inf>o</inf>) of the bipolar transistor in the IGBT (Insulated Gate Bipolar Transistor) structure semiconductor device is measured in this paper. The first step of the measurement is to find the Early voltage (V<inf>A</inf>) of the device. Then the Early voltage is used for calculating the base width (W<inf>B</inf>) and the doping density in the base (N<inf>B</inf>) of the device. Finally, we can use those parameters to calculate the common emitter current gain. The junction capacitance of the collector and the emitter are also measured to find the doping concentration in the emitter. All of the parameters are used for calculating the middle frequency common emitter current gain (β<inf>o</inf>). The experimental results show that errors of the measurement current gain are not more than 5%.
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    CMOS tunable transresistance amplifier
    (2000-12-01)
    Parnklang, Jirawath
    ;
    Riewruja, Vanchai
    ;
    Julprapa, Attaya
    A tunable wideband linear CMOS transresistance (Rm) amplifier is proposed and analyzed. The proposed circuit is consisted of the positive current mirror cascode with negative current mirror. The input and output impedance of the circuit are not so good to be the Rm amplifier. So, the output driver circuits with low output impedance and the negative feedback circuits are used for reduce the input and output impedance, increase bandwidth and enhance the linearity of the Rm circuit. The gain of the circuit can be also tuned by this shunt - shunt negative feedback.
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    Low power dissipation CMOS output driver circuits
    (2000-12-01)
    Parnklang, Jirawath
    ;
    Kumwachara, Kiattisak
    ;
    Kongtanasunthorn, Prapan
    The CMOS current-controlled output driver circuits, which are suitable for the low voltage supply integrated circuits, are presented in this title. The circuit consists of the negative and positive current mirror and the fundamental CMOS inverter circuits. This current mirror bias circuit can limit current in the transition region, that techniques is taking advantage for low-power operation. The experimental results show are shown which use the lowest possible supply voltage and low current can reduce power consumption in CMOS digital circuits.
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    Gasoline engine multi spark ignition system
    (2007-12-01)
    Wangwiwatthana, Chaleampan
    ;
    Kaewraungrit, Nutchaya
    ;
    Parnklang, Jirawath
    This paper is to develop the ignition system in spark plug of gasoline engine ignition by increase the sparking pulse at spark plug in one cycle which start form the before top dead center of the engine pistol to the position that the pistol of the engine come to the bottom dead center. So applying of ignition system has four sparking at spark plug in one cycle of each one stroke. This paper divided two parts for working. Past One is simulation to divide pulse signal that consist of continued pulse signal and selection pulse signal to spark in each one stroke. Part Two use encoder to measure cycle of engine that cooperation with engine CPU by working instead of distributor for choose pulse signal to each one stroke. Pulse signal width of each one stroke is depend on the Dwell angle, so the width of pulse signal is divided the stroke ignition of each one stroke by CPU working divide one pulse signal to be four pulse signal and transfer this pulse signal to drive coil ignition. © ICROS.
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    Current tunable CMOS operational transresistance amplifier
    (2001-01-01)
    Riewruja, V.
    ;
    Parnklang, J.
    ;
    Julprapa, A.
    A new signal power amplifier is presented in this paper. The proposed circuit is consisted of the new design of transresistance amplifier cell connecting with the common source negative feedback and the output driver circuit. The input and output impedance of the circuit is low because the negative feedback and output driver circuit are used. The voltage buffer is use for the output driver circuit. The new transresistance amplifier is found to have a constant bandwidth independent of gain in most close-loop configurations. The feedback network particular increased bandwidth and enhances the linearity of the transresistance amplifier. The biasing current of this shunt-shunt common source negative feedback can also tune the gain of the close-loop circuit configuration. In this work has shown an experimental result of the fundamental transresistance amplifier by used the commercial integrated circuits compared to the simulation result. And this confirms that the new design of transresistance amplifier is useable.