Sakdanuphab, Rachsak
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Sakdanuphab, Rachsak
Alternative Name
Sakdanuphab, R.
Sakdanuphab, Rachasak
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Email
rachsak.sa@kmitl.ac.th
14 results
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Item type:Publication, Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition(2022-06-15) ;Khwansungnoen, Phalakorn ;Daichakomphu, Noppanut; ; Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering technique. The effects of varying the Sn content through a variable Sn target sputtering power and post annealing at 673 K were investigated. The DC power density applied to the GST target was controlled at 50 W, while the power density of the Sn target was increased from 0 W to 40 W. The results demonstrate the coexistence of the fcc-GST, hcp-GST and SnTe phases in the Sn-added GST thin films. The substitution of Sn at the Ge-site increases the crystallization speed and leads to defects and lattice disordered local arrangement in the GST films, causing the Seebeck coefficient to increase. The SnTe phase was created as a result of the high Sn content in the sample due to the over-doping limit of Sn into the GST structure. The presence of SnTe in Sn-doped GST films increased the electrical conductivity. The maximum power factor of 17.0 μW/cmK<sup>2</sup> at 450 K was obtained at an Sn content of 14.7 at%. These results indicated that the thermoelectric properties of Sn-doped GST films were improved via the formation of an appropriate amount of SnTe composite. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Energy-saving synthesis and β-phase enhancement of Cu2Se thermoelectric materials via the microwave hybrid heating technique(2021-10-25); ; ; ;Harnwunggmoung, AdulHorprathum, MatiThermoelectric generators harvest energy from waste heat and convert it to electricity. β-Cu<inf>2</inf>Se is a candidate for them due to its outstanding thermoelectric properties and its environmentally friendly component elements. A microwave hybrid heating (MHH) method was used for the fast synthesis and enhancement of β-Cu<inf>2</inf>Se materials. The effects of the MHH reaction time on the phase microstructure and thermoelectric properties of the Cu<inf>2</inf>Se material were investigated, and the MHH method was compared with the conventional heating method. The X-ray diffraction patterns of samples, synthesized via the MHH method, showed monoclinic- (α) and cubic- (β) Cu<inf>2</inf>Se crystalline structures, whereas a single monoclinic-(α) structure was identified in a sample, synthesized via a conventional heating method. In addition, the β-Cu<inf>2</inf>Se phase was enhanced with increased MHH reaction time. The carrier concentration increased with β-Cu<inf>2</inf>Se content, which increased electrical conductivity and decreased the Seebeck coefficient. The Cu<sup>+</sup> ions in the β-Cu<inf>2</inf>Se phase led to the reduced thermal conductivity. A low thermal conductivity of 0.86 W m<sup>−1</sup> K<sup>−1</sup> and a maximum dimensionless figure of merit of 0.32 at 523 K were realized for 10 min MHH sample. Finally, MHH showed very low energy consumption and saved time, which are essential for industrialization. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Thickness Dependence of Thermoelectric Properties and Maximum Output Power of Single Planar Sb2Te3 Films(2022-12-01) ;Junlabhut, Prasopporn ;Nuthongkum, Pilaipon ;Harnwunggmoung, Adul; Hatayothai, ChanonP-type Sb<inf>2</inf>Te<inf>3</inf> films with different thicknesses were deposited on polyimide substrates via heat treatment-assisted DC magnetron sputtering. The correlations between the thickness variance and the structure, dislocation density, surface morphology, thermoelectric properties and output power are investigated. As a result, it is clear that the film thickness and the heat treatment process during growth are related to the diffusion of deposited atoms on the substrate surface, leading to imperfection defects inside the films. The imperfections inside the films are affected by their properties. This work also presents the thermoelectric efficiency of a planar single leg of the deposited films with various thicknesses. The maximum power factor is 2.73 mW/mK<sup>2</sup> obtained with a film thickness of 9.0 µm and an applied temperature of 100 °C. Planar Sb<inf>2</inf>Te<inf>3</inf> produced a maximum output power of 0.032 µW for a temperature difference of 58 K. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of annealing temperature on thermoelectric properties of bismuth telluride thick film deposited by DC magnetron sputtering(2020-07-15) ;Kianwimol, Supasak; ;Chanlek, Narong ;Harnwunggmoung, AdulWe report the thermoelectric properties of thick bismuth-telluride (Bi<inf>2</inf>Te<inf>3</inf>) films deposited on polyimide substrates by DC magnetron sputtering and annealed at various temperatures (150–350 °C). The influence of annealing temperature on the microstructure and electronic structure of thick Bi<inf>2</inf>Te<inf>3</inf> films is discussed. In this work, the annealed film at 250 °C has the best thermoelectric property due to highest electrical conductivity and Seebeck coefficient. The main effect of annealing temperature was really helpful to improve crystalline structure and enhance carrier mobility, whereas the carrier concentration was reduced due to the volatile of tellurium atom during annealing. Chemical states of bound and unbound atoms (Bi, Bi<sup>3+</sup>, Te, and Te<sup>2‐</sup>) on the surface play an important role in electrical properties. The exceed temperature caused the micro-crack formation and affect carrier transport by the scattering. The power factor of Bi<inf>2</inf>Te<inf>3</inf> deposited by DC magnetron sputtering and annealed at 250 °C is comparable to the power factors of thick Bi<inf>2</inf>Te<inf>3</inf> film deposited by various deposition techniques. The output power of single-leg, thick, thermoelectric Bi<inf>2</inf>Te<inf>3</inf> film annealed at 250 °C as a function temperature generated a power of 0.98 μW at a temperature difference of 50 °C. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target(2021-11-01) ;Theekhasuk, Nattharika; ;Nuthongkum, Pilaipon ;Pluengphon, PrayoonsakHarnwunggmoung, AdulThick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10<sup>−3</sup> W/mK<sup>2</sup> at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Achieving thermoelectric improvement through the addition of a small amount of graphene to CuAlO2 synthesized by solid-state reaction(2018-07-15) ;Daichakomphu, Noppanut; ;Harnwunggmoung, Adul ;Pinitsoontorn, SupreeIn this work, delafossite CuAlO<inf>2</inf> powders with graphene (0.00–0.20 wt%) were synthesized by a solid-state reaction method. X-ray diffraction and transmission electron microscope results indicated that graphene was segregated in CuAlO<inf>2</inf> as a split phase, such as composite material. A little addition of graphene content reduces the thermal conductivity and increases the carrier concentration because the graphene generates many point defects and aided carrier-phonon scattering. The CuAlO<inf>2</inf> with graphene content of 0.05 wt% shows the maximum electrical conductivity of 470 S/m at 700 K. In addition, the maximum value for ZT of 0.0045 was recorded at 575 K with the graphene/CuAlO<inf>2</inf> composite (0.05 wt%). Therefore, in brief, this study has highlighted the benefits of combining delafossite CuAlO<inf>2</inf> with a small amount of graphene as a potential route for achieving highly efficient thermoelectric materials. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Improving the photo-thermoelectric performance of CuAlO2 via doping with Bi(2021-12-01) ;Daichakomphu, Noppanut; ;Rodpun, Phumin ;Pluengphon, PrayoonsakHarnwunggmoung, AdulThe photothermoelectric (PTE) effect enables the conversion of temperature differences induced by absorbed light to electrical voltages. For the first time, we investigated the effect of Bi doping on the photothermoelectric properties of CuAlO<inf>2</inf>. In this study, delafossite CuAl<inf>1-x</inf>Bi<inf>x</inf>O<inf>2</inf> (x = 0.01, 0.02, 0.03, 0.04, and 0.06) powders were synthesised. X-ray diffraction and X-ray absorption spectroscopy results indicated that the doping limit of Bi content was approximately 2.6–2.7 at% (x = 0.026–0.027). At x = 0.02, we successfully demonstrated the increase of electrical conductivity due to the reduced effective mass and the increased hole concentration, the increase of optical absorption due to the reduced band gaps, and lower thermal conductivity resulting from mass and strain fluctuations. At a Bi content of 2 at%, the photovoltage signals increased compared with the undoped CuAlO<inf>2</inf>. These results indicated that Bi doping could potentially improve the PTE properties of CuAlO<inf>2</inf>. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of real working environment/formation of oxide phase on thermoelectric properties of flexible Sb2Te3 films(2019-09-01); ;Harnwunggmoung, Adul; Flexible Sb<inf>2</inf>Te<inf>3</inf> thin films, for thermoelectric generator applications, were deposited by DC magnetron sputtering. As-deposited films were annealed in air to simulated a realistic operating environment. The oxidation behavior of the films was studied by monitoring their phase change on exposure to air at different temperatures between 50 and 300 °C for annealing times from 1 to 15 h. Oxidation of Sb and Te formed Sb<inf>2</inf>Te<inf>4</inf> and TeO<inf>2</inf> phases when annealing above 100 °C and Sb<inf>2</inf>Te<inf>3</inf> decomposed into oxide phases at an annealing temperature of 250 °C for 15 h. The thermoelectric performance decreased as the content of Sb<inf>2</inf>O<inf>4</inf> and TeO<inf>2</inf> phases increased. These findings show the limitations of Sb<inf>2</inf>Te<inf>3</inf> films operating in air without vacuum or a protective environment. We propose that the kinetic growth of oxide formation on the Sb<inf>2</inf>Te<inf>3</inf> thin films depend on chemical activation energy and oxygen diffusion through the oxide barrier by the variation of annealing temperature and annealing time, respectively. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Figure of merit improvement of delafossite CuAlO2 with the addition of Fe and graphene(2019-11-01) ;Daichakomphu, Noppanut ;Harnwunggmoung, Adul ;Chanlek, Narong; This study investigated the synthesis of delafossite CuAlO<inf>2</inf> with Fe and graphene through a solid-state reaction method. The results of X-ray diffractometry showed that graphene was insoluble in delafossite CuAlO<inf>2</inf> while Fe was substituted into Al sites, expanding the d-spacing. From X-ray photoelectron spectroscopy, graphene induced excess oxygen in the delafossite CuAlO<inf>2</inf> structure via C–O–Cu bonds and improved the electrical conductivity. In addition, the thermal conductivity was reduced due to generation of point defects, phonon-phonon Umklapp and carrier-phonon scattering. The addition of Fe and graphene in CuAlO<inf>2</inf> shows an improvement of ZT to 0.0114 at 573 K. This is attributable to its increase in charge carrier density, as well as a decrease in thermal conductivity. This study highlights the benefits of combining Fe and graphene in delafossite CuAlO<inf>2</inf> as a prospective process for attaining a high figure of merit thermoelectric materials. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhancement of thermoelectric properties in rapidly synthesised β-Cu2Se using optimized Cu content and microwave hybrid heating(2024-01-15); ; ;Gobpant, Jakrit ;Harnwunggmoung, AdulTo our knowledge, this is the first study to successfully synthesise high-temperature-phase copper selenide (β-Cu<inf>2</inf>Se) at room temperature using rapid microwave hybrid heating (MHH). Controlling the starting Cu/Se ratio is the critical parameter for adjusting the content of α- and β-phases in the as-synthesised sample. The relatively low Cu composition causes impurities to form in the Cu<inf>3</inf>Se<inf>2</inf> phase, deteriorating the thermoelectric (TE) properties of the Cu<inf>2</inf>Se material. The β phase formation at room temperature promotes electrical conductivity. The thermal conductivities of the Cu<inf>2.0</inf>Se samples were 0.5–0.8 Wm<sup>−1</sup>K<sup>−1</sup> at 303–673 K. A strong electronic-phonon interaction may potentially couple electronic thermal conductivity (κ<inf>e</inf>) and lattice thermal conductivity (κ<inf>L</inf>), resulting in incomplete separability of κ<inf>L</inf> and κ<inf>e</inf> in the β-Cu<inf>2.0</inf>Se sample. The Cu<inf>2.0</inf>Se exhibited a ZT value of 0.65 at 523 K because of its considerably lowered thermal conductivity.
