Mano, Kitipong

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Mano, Kitipong
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kitipong.ma@kmitl.ac.th

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    Item type:Publication,
    Study on optical and electronic properties of Sn-doped ZnPc
    (2013-10-29)
    Rangkasikorn, Adirek
    ;
    Sributr, Chaloempol
    ;
    Rojanasuwan, Sunit
    ;
    Tammarugwattana, Narin
    ;
    Mano, Kitipong
    Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α- phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films. © (2013) Trans Tech Publications, Switzerland.
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    Item type:Publication,
    Current-mode 4 quadrant divider employing only single active element
    (2012-12-01)
    Woratraijariya, Phumsak
    ;
    Mano, Kitipong
    ;
    Jaikla, Winai
    ;
    Maneewan, Suwat
    This article presents a current-mode 4 quadrants divider using single current controllable current conveyor transconductance amplifier (CCCCTA). The magnitude of the output signal is temperature-insensitive. The proposed circuit consists of only single CCCCTA. Without any matching conditions and external passive elements, the circuit is then appropriate for an IC architecture. The PSpice simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 4.84mW at ±2.5V supply voltages. © 2012 IEEE.