Rangkasikorn, Adirek

Preferred name

Alternative Name

Rangkasikorn, A.

Main Affiliation

Integrated Innovative Technology

adirek.ra@kmitl.ac.th

Now showing 1 - 10 of 30

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Metal Oxide Nanostructures Enhanced Microfluidic Platform for Efficient and Sensitive Immunofluorescence Detection of Dengue Virus
(2023-11-01)
Pormrungruang, Pareesa
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Phanthanawiboon, Supranee
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Jessadaluk, Sukittaya
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Larpthavee, Preeda
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Thaosing, Jiraphon
Rapid and sensitive detection of Dengue virus remains a critical challenge in global public health. This study presents the development and evaluation of a Zinc Oxide nanorod (ZnO NR)-surface-integrated microfluidic platform for the early detection of Dengue virus. Utilizing a seed-assisted hydrothermal synthesis method, high-purity ZnO NRs were synthesized, characterized by their hexagonal wurtzite structure and a high surface-to-volume ratio, offering abundant binding sites for bioconjugation. Further, a comparative analysis demonstrated that the ZnO NR substrate outperformed traditional bare glass substrates in functionalization efficiency with 4G2 monoclonal antibody (mAb). Subsequent optimization of the functionalization process identified 4% (3-Glycidyloxypropyl)trimethoxysilane (GPTMS) as the most effective surface modifier. The integration of this substrate within a herringbone-structured microfluidic platform resulted in a robust device for immunofluorescence detection of DENV-3. The limit of detection (LOD) for DENV-3 was observed to be as low as 3.1 × 10−4 ng/mL, highlighting the remarkable sensitivity of the ZnO NR-integrated microfluidic device. This study emphasizes the potential of ZnO NRs and the developed microfluidic platform for the early detection of DENV-3, with possible expansion to other biological targets, hence paving the way for enhanced public health responses and improved disease management strategies.
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Tailoring ZnO Nanostructures through Precursor Concentration and Hydrothermal Duration: A Pathway to Efficient Solar Water Splitting
(2026-11-10)
Borklom, Phanlapa
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Khemasiri, Narathon
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Jessadaluk, Sukittaya
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Rattanawarinchai, Prapakorn
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Kayunkid, Navaphun
This work investigated the formation of ZnO nanostructures on ITO substrates prepared by self-seeding hydrothermal synthesis for photoelectrochemical ( PEC) water splitting applications. The hydrothermal parameters, precursor concentration and hydrothermal time, were varied to explore their influences on ZnO crystallinity, morphology, and PEC performance. The combinations of X-ray diffraction and field emission scanning electron microscopy revealed highly oriented ZnO nanostructures with diverse morphologies, including small granules, nanorods, dense films, and hexagonal platelets. Topographic profiling of the morphological parameters revealed complex relationships between synthesis conditions and nanostructure characteristics, highlighting the importance of considering aggregation phenomena in substrate-based growth. This aggregation led to deviations from conventional crystal growth theory predictions, particularly for grain density and diameter evolution. PEC performance evaluation identified ZnO nanorods as the optimal morphology, exhibiting a photocurrent density of 0.182 mA/cm² at 0 V vs. Ag/AgCl. Further enhancement was achieved by decorating ZnO nanorods with CdS nanoparticles, resulting in a six-fold increase in photocurrent density (1.2 mA/cm²). This improvement is attributed to expanded light absorption and improved charge separation at the CdS/ ZnO interface. Our findings demonstrate the potential of rationally designed ZnO-based nanostructures in the advancement of solar-driven water splitting technologies and provide valuable insights for optimizing PEC systems through precise control of hydrothermal synthesis parameters, consideration of substrate-induced aggregation, and strategies for photoelectrochemical (PEC) water splitting applications.
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Growth window and metal-insulator transition behavior of VO2 thin films deposited by pulsed laser deposition for thermal switch applications
(2026-05-01)
Jessadaluk, Sukittaya
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Rahong, Sakon
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Kayunkid, Navaphun
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Khemasiri, Narathon
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Rangkasikorn, Adirek
Vanadium dioxide (VO<inf>2</inf>) is a strongly correlated transition metal oxide that exhibits a sharp and reversible metal-insulator transition (MIT) near room temperature, making it a promising material for thermal switching and adaptive electronic applications. In this study, VO<inf>2</inf> thin films were deposited on single-crystalline Si, thermally grown SiO<inf>2</inf>, and fused quartz substrates by pulsed laser deposition, and the influence of substrate temperature and oxygen partial pressure on phase formation, structural properties, and MIT behavior was systematically investigated. By optimizing deposition conditions within a narrow oxygen pressure window, phase-pure monoclinic VO<inf>2</inf>(M) thin films with high crystalline quality were achieved while suppressing the formation of over-oxidized vanadium oxide phases. Structural and chemical analyses using X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed the stabilization of the V4+ oxidation state and uniform film stoichiometry. Temperature-dependent electrical measurements revealed a pronounced and reproducible MIT characterized by an abrupt change in resistance and a clear thermal hysteresis. In-situ temperature-dependent X-ray diffraction further demonstrated a direct correlation between the monoclinic-rutile structural transformation and the electronic transition. Importantly, the MIT behavior was consistently observed across all investigated substrates, indicating robust film growth and substrate tolerance. These results provide insight into the structure-property relationships governing VO<inf>2</inf> thin films and highlight their potential for integration into thermal switch and thermally adaptive device architectures.
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Development of solution-based electrodes from nanocomposite material between PEDOT:PSS and ITO nanoparticles
(2017-01-01)
Watthanarungsarit, Kraisak
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Wirunchit, Supamas
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Rangkasikorn, Adirek
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Kayunkid, Navaphun
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Nukeaw, Jiti
Electrodes based on low-temperature preparation such as ink jet printing have been famously used in plastic electronic devices. The aim of this work is to investigate the specific properties of composite materials between nanoparticles of indium tin oxide (np-ITO) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an alternative electrode for plastic electronic devices. The composite materials were prepared as a function of np-ITO concentration varied from 1 to 20 w/v%. The 1x1 cm2 hybrid electrodes were fabricated by drop casting method on the microscope slide. This method offers many advantages, including simple preparation, low manufacturing cost and short fabricating time. The electrical resistance of the hybrid films was measured using two-probe measurement. Moreover, the surface morphology of the composited film was explored by optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results clearly suggest that mixing np-ITO with PEDOT:PSS can significantly improve conductivity of the composited system. Average value of electrical resistance measured from np-ITO, PEDOT:PSS and composite film are 87.58 kΩ, 40.33 kΩ and 393 Ω, respectively. The significant reduction of film resistance can be explained by the conducting paths made up by PEDOT:PSS to connect np-ITO domain.
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Growth and characterizations of tin doped zinc-phthalocyanine prepared by thermal co-evaporation in high vacuum as a nanomaterial
(2016-02-01)
Kayunkid, Navaphun
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Rangkasikorn, Adirek
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Saributr, Chaloempol
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Nukeaw, Jiti
This research is related to the growth and characterizations of the novel hybrid nanomaterial, tin doped zinc-phthalocyanine thin films (Sn-doped ZnPC), grown by thermal co-evaporation. The concentration of Sn in hybrid films was controlled by adjusting the deposition rate between Sn and ZnPc. The hybrid films were characterized by atomic force microscopy and UV-visible spectroscopy to reveal the physical and optical properties of hybrid films. Moreover, the electrical properties, e.g., carrier mobility and carrier concentration, of the indium tin oxide (ITO)/Sn-doped ZnPc/ aluminium (Al) devices were extracted from the current-voltage and capacitance-voltage characteristics. Furthermore, X-ray photoelectron spectroscopy and Raman spectroscopy was employed to explore the chemical interaction taking place in doped films. Sn doping into ZnPc changes the film's specific properties, e.g., morphology, crystalline packing, absorption spectra, and conductivity. Moreover, no chemical bond is formed between Sn and ZnPc, and Sn dopants are formed as metal clusters covered by derivative oxide (SnOx) embedded in the Sn-doped ZnPc film.
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Hole doping through indium intercalation into copper phthalocyanine
(2013-10-29)
Jaruvanawat, Anuchit
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Prajuabwan, Pakorn
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Rojanasuwan, Sunit
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Chanhom, Annop
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Rangkasikorn, Adirek
A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material. © (2013) Trans Tech Publications, Switzerland.
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Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application
(2023-03-01)
Khemasiri, Narathon
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Klamchuen, Annop
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Jessadaluk, Sukittaya
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Rattanawarinchai, Prapakorn
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Borklom, Punlapa
Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10−3 Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm2 is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance.
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Influence of aluminum-doped zinc oxide seeding film on morphological properties of hydrothermally-grown zinc oxide nanorods
(2020-01-01)
Khemasiri, Narathon
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Kayunkid, Navaphun
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Soyeux, Nathan
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Rattanawarinchai, Prapakorn
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Jessadaluk, Sukittiya
The morphological properties, e.g. diameter, aspect ratio, and density, of zinc oxide nanorods (ZnO-NRs) can be achieved through the control of seeding film morphology in seed-assisted hydrothermal process. The different morphologies of seeding film made by aluminum-doped zinc oxide (AZO) thin films are obtained by varying the thickness of seeding film. The change of seeding morphology from small granules with (002) plane dominant to platelets with (103) plane dominant leads to the significant change in the morphological formation of ZnO-NRs successively grown on the seeding film. The seeding film containing the dominant plane of (002) and small granules offers vertical-aligned ZnO-NRs with high surface area (high density and respect ratio) attributed to high nucleating density as well as the limit of the lateral growth from the surrounding adjacent nanorods. This work provides the consideration of morphological properties of seeding film.
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Hole doping through indium intercalation into nickel phthalocyanine
(2013-04-29)
Prajuabwan, Pakorn
;
Rojanasuwan, Sunit
;
Chanhom, Annop
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Jaruvanawat, Anuchit
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Rangkasikorn, Adirek
A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique. X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is α-phase as same as that of pristine NiPc. Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping. Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material. © (2013) Trans Tech Publications, Switzerland.
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Enhancement of sensing characteristics of Polydimethylsiloxane-based capacitive force sensor by introducing conductive polymer to dielectric layer
(2021-01-01)
Siangkhio, Yasumin
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Rangkasikorn, Adirek
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Tammarugwattana, Narin
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Kayunkid, Navaphun
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Jessadaluk, Sukittaya
A capacitive force sensor is one of the electronics components used in several electronic devices and applications. An improvement of sensing characteristics of the sensor, for example sensitivity and response time, becomes an interesting research topic. The alternative approach to enhance the sensitivity and response time of polydimethylsiloxane-based capacitive force sensors is proposed by introducing poly(3,4-ethylenedioxythiophene) polystyrene sulphonate, a conductive polymer, into polydimethylsiloxane active layer. Two sensors using different active layers, (i) polydimethylsiloxane (conventional sensor) and (ii) poly(3,4-ethylenedioxythiophene) polystyrene sulphonate mixed polydimethylsiloxane (modified sensor), were fabricated and characterised to reveal the sensing enhancement. Interestingly, the modified sensor shows the significant increase in the sensitivity from 0.7 to 1.14 kPa–1 (+62.86%) and the shortening response time from 1.55 to 0.43 s (−72.26%) with respect to the conventional sensor. In addition, the deterioration in elastic behaviour and the faster charge–discharge behaviour observed from the poly(3,4-ethylenedioxythiophene) polystyrene sulphonate mixed polydimethylsiloxane film indicate the better deformation and charge transport than that from polydimethylsiloxane film. Therefore, it can be concluded that the conductive poly(3,4-ethylenedioxythiophene) polystyrene sulfonate additive plays the role of mechanical and electrical modification of the polydimethylsiloxane active layer leading to the enhancement in sensitivity and response time of the polydimethylsiloxane-based capacitive force sensor.
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Rangkasikorn, Adirek

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