Kasemsuwan, Varakorn

Loading...
Thumbnail Image
Preferred name
Kasemsuwan, Varakorn
Alternative Name
Kasemsuwan, V.
Kasemsuwan, Varakom
Main Affiliation
Email
varakorn.ka@kmitl.ac.th

Settings

Now showing 1 - 2 of 2
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor
    (2016-09-06)
    Thongleam, Thawatchai
    ;
    Suadet, Apirak
    ;
    Kasemsuwan, Varakorn
    A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G<inf>m(eff)</inf>), high effective drain impedance (R<inf>D(eff)</inf>) and low effective source impedance (R<inf>S(eff)</inf>). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 μm CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 μW. The simulation results showed higher G<inf>m(eff)</inf>, larger R<inf>D(eff)</inf> and smaller R<inf>S(eff)</inf> as compared to those of simple bulk-driven MOS transistor.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    A compact class-AB bulk-driven quasi-floating gate current mirror for low voltage applications
    (2013-12-31)
    Suadet, Apirak
    ;
    Kasemsuwan, Varakorn
    A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as V<inf>T</inf>+V<inf>DSAT</inf>. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW. © 2013 IEEE.