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    Item type:Publication,
    Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor
    (2016-09-06)
    Thongleam, Thawatchai
    ;
    Suadet, Apirak
    ;
    A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G<inf>m(eff)</inf>), high effective drain impedance (R<inf>D(eff)</inf>) and low effective source impedance (R<inf>S(eff)</inf>). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 μm CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 μW. The simulation results showed higher G<inf>m(eff)</inf>, larger R<inf>D(eff)</inf> and smaller R<inf>S(eff)</inf> as compared to those of simple bulk-driven MOS transistor.