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    A 1.0 volt thermal noise-canceling CMOS ransimpedance-based amplifier
    (2008-12-01)
    Wangtaphan, Skawrat
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    Suadet, Apirak
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    Meksiri, Sukarasut
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    This paper presents a design of 1.0 V thermal noise-canceling amplifier using 0.13μm CMOS technology. The amplifier consists of a CMOS inverter-based transimpedance amplifier, and a noise-canceling circuitry. The thermal noise-canceling circuitry is very simple, and consists of only two CMOS inverters. The simulation result shows the input referred noise of the proposed amplifier is 3 nV/√Hz, which is 21 percent less than that of the transimpedance amplifier. The bandwidth of the circuit (ω<inf>-3dB</inf>) is 1 GHz, and the power dissipation is 163 μW. ©2008 IEEE.
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    A high performance thermal noise-canceling transimpedance-based differential amplifier
    (2009-12-01)
    Wangtaphan, Skawrat
    ;
    This paper presents a design of 1.2 V thermal noise-canceling differential amplifier using 0.13 um CMOS technology. The amplifier employs a CMOS inverter-based transimpedance amplifier, and a noise-canceling circuitry. The thermal noise-canceling circuitry is used to cancel channel thermal noise of the input MOSFET. The simulation result shows the noise figure of 2.32 dB. The gain and bandwidth of the amplifier are 42.14 dB and 2 GHz respectively. The power dissipation is 13 mW. ©2009 IEEE.
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    A 0.6 volt class-AB CMOS voltage follower with bulk-driven quasi-floating gate super source follower
    (2012-10-02)
    Wangtaphan, Skawrat
    ;
    This paper presents a design of 0.6 V class-AB voltage follower (VF) using 0.13 μm CMOS technology. The follower is developed based on the super source follower (SSF) using bulk-driven and quasi-floating gate (QFG) techniques. The proposed VF can operate at low voltage without DC level shift between the input and output terminals. The simulation results show the total harmonic of 0.3 % for an input/output voltage of 0.18 V <inf>pp</inf> at 100 kHz (R <inf>L</inf>//C <inf>L</inf>=5 kΩ//100 pF). The power dissipation is found to be 38 μW. © 2012 IEEE.