Kasemsuwan, Varakorn
Loading...
Preferred name
Kasemsuwan, Varakorn
Alternative Name
Kasemsuwan, V.
Kasemsuwan, Varakom
Main Affiliation
Email
varakorn.ka@kmitl.ac.th
2 results
Now showing 1 - 2 of 2
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, Current voltage and capacitance voltage characteristics of dual channel high electron mobility transistor(1999-12-01)In this paper, the current and the capacitance voltage characteristics of a dual channel high electron mobility transistor(DC-HEMT) are presented. The model uses a single analytical charge expression to describe four different charge components: two dimensional electron gas on the top and bottom channels, free electrons and neutralized donors in AlGaAs. The current voltage characteristics includes the effect of the parasitic source and drain resistances, the mobility degradation and channel length modulation through a quasi two dimensional Poisson equation. The capacitance-voltage expression is obtained through the summation of the variation of each charge component with respect to the variation of the gate voltage. Theoreticai predictions of the model are compared with the experimental data and found to be in good agreement. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Simple DC model for dual channel high electron mobility transistors(1998-12-01)In this paper, the dc model for dual channel high electron mobility transistor(DC-HEMT) is presented. The model is developed based on a single charge expression that describes four different charge components: two dimensional electron gas on the top and bottom channels, free electrons and the neutralized donors in AlGaAs layer. This expression not only shows the smoothness of the charges over a wide range of applied gate voltages but also shows a good agreement with the numerical solution of the charges. The current voltage characteristics is derived including the effect of the parasitic source and drain resistances, the mobility degradation and channel length modulation through a quasi two dimensional Poisson equation in the high field region of the channel. Finally, the theoretical predictions of the model are compared with the experimental data and found to be in good agreement.
