Sakulkalavek, Aparporn

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Sakulkalavek, Aparporn
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Sakulkalavek, A.
Sakulkalavek, Aparpron
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aparporn.sa@kmitl.ac.th

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    Item type:Publication,
    Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures
    (2017-05-01)
    Khumtong, T.
    ;
    Sukwisute, P.
    ;
    Sakulkalavek, A.
    ;
    Sakdanuphab, R.
    The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) thin films have been investigated for thermoelectric applications. Sb<inf>2</inf>Te<inf>3</inf> thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb<inf>2</inf>Te<inf>3</inf> target using different sputtering pressures in the range from 4 × 10<sup>−3</sup> mbar to 1.2 × 10<sup>−2</sup> mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb<inf>2</inf>Te<inf>3</inf> films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm<sup>−1</sup>, 6.38 × 10<sup>19</sup> cm<sup>−3</sup>, and 3.67 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, respectively. The maximum power factor of 1.07 × 10<sup>−4</sup> W m<sup>−1</sup> K<sup>−2</sup> was achieved for the film deposited at sputtering pressure of 1.0 × 10<sup>−2</sup> mbar.