Muanghlua, Rangson

Preferred name

Muanghlua, Rangson

Alternative Name

Muanghlua, R.

Muanghlua, Rangsan

Main Affiliation

School of Engineering

Email

rangson.mu@kmitl.ac.th

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Effects of Temperature and Channel Doping on the BSIM3 Threshold Voltage Model of NMOSFET form Substrate Bias Dependent Methodology
(2016-01-01)
Muanghlua, Rangson
;
Niemcharoen, Surasak
;
Poyai, Amporn
;
Ruangphanit, Anucha
The effects of channel doping and temperature dependence on the BSIM3 threshold voltage model of NMOSFET form substrate bias dependent methodology is proposed. The I<inf>DS</inf> -V<inf>GS</inf> in linear region with different substrate bias condition of a big size of NMOSFET was used. The threshold voltage parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. The electrical parameters γ, N<inf>CH</inf> and N<inf>SUB</inf> also the BSIM3 model parameter K<inf>1</inf> and K<inf>2</inf> at different channel implanted dose and different operating temperature are extracted. The model can be implemented in simulation tools with the error is less than 5%.