Muanghlua, Rangson

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Muanghlua, Rangson
Alternative Name
Muanghlua, R.
Muanghlua, Rangsan
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Email
rangson.mu@kmitl.ac.th

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    Item type:Publication,
    Investigation of Oxide and Interface Trapped Charge on Threshold Voltage Shift in Gamma Irradiated NMOSFET by Subthreshold Method
    (2021-04-01)
    Ruangphanit, Anucha
    ;
    Muanghlua, Rangson
    In this paper, the oxide trapped charge density (NOT) and interface trapped charge density (NIT) on the threshold voltage shift with the total dose under gamma irradiation of NMOSFET are investigated. The subthreshold technique (mV/dec) is used to separate the irradiation induced threshold voltage shifts into voltage shifts due to the interface trapped charge. The linear extrapolation method is used to extract the threshold voltage from I{DS}-V{GS} curve at low VDS of typically 100 mV. The results showed that the threshold voltage was shifted from 0.69 V to 0.45 V, the threshold swing was increased from 95 to 107 mV/dec, the oxide charge and interface charge density were found to be increase almost by 1 order in magnitude for a total gamma dose of 10 kGy.
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    Effects of Temperature and Channel Doping on the BSIM3 Threshold Voltage Model of NMOSFET form Substrate Bias Dependent Methodology
    (2016-01-01)
    Muanghlua, Rangson
    ;
    Niemcharoen, Surasak
    ;
    Poyai, Amporn
    ;
    Ruangphanit, Anucha
    The effects of channel doping and temperature dependence on the BSIM3 threshold voltage model of NMOSFET form substrate bias dependent methodology is proposed. The I<inf>DS</inf> -V<inf>GS</inf> in linear region with different substrate bias condition of a big size of NMOSFET was used. The threshold voltage parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. The electrical parameters γ, N<inf>CH</inf> and N<inf>SUB</inf> also the BSIM3 model parameter K<inf>1</inf> and K<inf>2</inf> at different channel implanted dose and different operating temperature are extracted. The model can be implemented in simulation tools with the error is less than 5%.