Muanghlua, Rangson

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Muanghlua, Rangson
Alternative Name
Muanghlua, R.
Muanghlua, Rangsan
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Email
rangson.mu@kmitl.ac.th

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    Item type:Publication,
    The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
    (2018-07-02)
    Kerdpradist, Amonrat
    ;
    Ruangphanit, Anucha
    ;
    Titiroongruang, Wisut
    ;
    Muanghlua, Rangson
    This paper presents the effect of Gamma Irradiated on threshold voltage, surface mobility and transconductance on N-channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8-micron CMOS technology. Then gamma irradiation (Co-60) at a total dose varied from 1 to 10 \mathbf{kGy}. By performing five rounds to observe changes in threshold voltage when the devices were exposed to gamma rays for measurement to extraction threshold Voltage (V<inf>TH</inf>) into the surface mobility (Uo) from I<inf>DS</inf>Vs V<inf>Gs</inf> curves in the saturation region. As a result, the threshold Voltage reduces at highest dose by approximately 38% compared with conventional N-channel MOSFET, for a parameter extraction in the level 3 model for MOSFET SPICE parameters is presented.