Pecharapa, Wisanu
Loading...
Preferred name
Pecharapa, Wisanu
Alternative Name
PECHARAPA, Wisanu
Pecharapa, W.
Main Affiliation
Email
wisanu.pe@kmitl.ac.th
Now showing 1 - 2 of 2
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, Gamma-Ray Spectroscopic Performance of Large-Area CdTe-Based Schottky Diodes(2019-01-01); Aoki, ToruSpectroscopic performance of the Ni/CdTe/Au Schottky diode X/γ-ray detectors was examined by measurements of <sup>137</sup> Cs isotope spectra at different bias voltages and operation time. Both the Schottky (Ni-CdTe) and near Ohmic (Au-CdTe) contacts were formed on the opposite sides (10 × 10 mm <sup>2</sup> ) of high resistivity CdTe(111) crystals after preliminary chemical etching and Ar-ion bombardment with different parameters. The detectors had low reverse dark current density (4–6 nA/cm <sup>2</sup> and 8–12 nA/cm <sup>2</sup> at bias of 500 V and 1000 V, respectively) and showed quite high energy resolution (2–4%@662 keV) at room temperature. The optimal bias voltage ranges for the Ni/CdTe/Au detectors were determined to achieve sufficiently high detection efficiency and energy resolution. These parameters were changing by 30–50% for the detectors biased and subjected to γ-ray radiation during several hours that evidenced quite low degradation. The detector spectroscopic parameters can be recovered by turning off the bias for seconds and turned on it again to continue measurements. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, XPS Study of the In/CdTe Interface Modified by Nanosecond Laser Irradiation(2019-01-01); The X-ray photoelectron spectroscopy (XPS) with 650 eV synchro-tron radiation was employed to study the In/CdTe diode detector structures formed by laser-induced doping and subjected to multiple Ar-ion etching from the In-coated side. The dependences of the peak areas in the high-resolution Cd 3d and In 3d XPS spectra on the etching number demonstrated the presence of Cd atoms in the In film and In dopant atoms in the CdTe near the In/CdTe inter-face. This was attributed to ultrafast mutual diffusion under laser action. The XPS results were direct evidence of incorporation of In dopant atoms into the surface region of the CdTe crystal and penetration of Cd atoms into the In film.