Amnuyswat, Kittiphong

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Amnuyswat, Kittiphong
Alternative Name
Amnuyswat, K.
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kittiphong.am@kmitl.ac.th

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    Local structure investigation of indium oxynitride thin films by X-ray absorption fine structure
    (2010-05-05)
    Amnuyswat, Kittiphong
    ;
    Thanomngam, P.
    ;
    Sopitpan, S.
    ;
    Sungthong, A.
    ;
    Porntheeraphat, S.
    Indium Oxynitride (InON) thin films prepared by Reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study[2] that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In <inf>2</inf>O<inf>3</inf>) and indium nitride (InN) phase. ©2010 IEEE.
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    Investigation of oxygen contamination in indium nitride thin film by x-ray absorption fine structure
    (2010-02-05)
    Amnuyswat, K.
    ;
    Thanomngam, P.
    ;
    Sopitpan, S.
    ;
    Sungthong, A.
    ;
    Porntheerapat, S.
    Local structures of indium oxynitride (InON) nano-crystal prepared by reactive gastiming RF magnetron sputtering technique are under investigation. Since the optical properties of these InON thin films depend on gas-timing ratio, the local structure analysis is needed in order to determine the relation between the gas timing ratio and its optical properties. In this work, InON thinfilm with 30:0 seconds (N<inf>2</inf>:O<inf>2</inf>) gas-timings ratio was analyzed for its local structure using X-ray absorption fine structure (XAFS) technique in conjunction with first principle calculation. The results indicate that the crystal structure of the film is wurtzite structure which is a typical structure of InN. However from the results of Auger Electron Spectroscopy (AES), there are oxygen contents in the film. Since XAFS analysis confirmed the 4-fold local structure of Indium atom, these oxygen atoms must be substituted in nitrogen sites with slightly changing the local structure of Indium atom. The best fit of XAFS data indicated that there is an oxygen atom substituted in nitrogen site of the 4-fold indium. © (2010) Trans Tech Publications.
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    XAFS analysis of indium oxynitride thin films grown on silicon substrates
    (2013-01-01)
    Amnuyswat, K.
    ;
    Saributr, C.
    ;
    Thanomngam, P.
    ;
    Sungthong, A.
    ;
    Porntheeraphat, S.
    Local structure of indium oxynitride thin films grown on silicon substrates was investigated by X-ray absorption fine structure technique incorporated with first principle calculations. The thin films were grown by using reactive gas timing radio frequency (RF) magnetron sputtering technique with nitrogen (N<inf>2</inf>) and oxygen (O<inf>2</inf>) as reactive gasses. The reactive gasses were interchangeably fed into sputtering system at five different time intervals. The gas feeding time intervals of N<inf>2</inf>:O<inf>2</inf> are 30:0, 30:5, 30:10, 30:20 and 10:30s, respectively. The analysis results can be divided into three main categories. Firstly, the films grown with 30:0 and 30:5s gas feeding time intervals are wurtzite structure indium nitride with 25 and 43% oxygen contaminations, respectively. Secondary, the film grown with 10:30s gas feeding time intervals is bixbyite structure indium oxide. Finally, the films are alloying between indium nitride and indium oxide for other growth condition. The fitted radial distribution spectra, the structural parameters and the combination ratios of the alloys are discussed. © 2012 John Wiley & Sons, Ltd.