Local structure investigation of indium oxynitride thin films by X-ray absorption fine structure

Indium Oxynitride (InON) thin films prepared by Reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study[2] that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In 2O3) and indium nitride (InN) phase. ©2010 IEEE.

Citation

Inec 2010 2010 3rd International Nanoelectronics Conference Proceedings, 590-591, 2010