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    Item type:Publication,
    Study on optical and electronic properties of Sn-doped ZnPc
    (2013-10-29) ;
    Sributr, Chaloempol
    ;
    Rojanasuwan, Sunit
    ;
    ;
    Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α- phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films. © (2013) Trans Tech Publications, Switzerland.
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    Item type:Publication,
    Evidence of phase transition of indium doped Zinc phthalocyanine
    (2013-04-29)
    Rojanasuwan, Sunit
    ;
    Prajuabwan, Pakorn
    ;
    Chanhom, Annop
    ;
    Jaruvanawat, Anuchit
    ;
    A new intercalation of Indium and Zinc Phthalocyanine(ZnPc) thin films is developed by using thermal co-evaporation method. Optical characteristics of In-doped ZnPc are studied in comparison with pristine ZnPc, which shows improvement on optical absorption at the visible spectrum. The presence of a new phase transition upon Indium doping is examined and consequently support the idea of the intercalated phase upon doping. A Schottky diode made of Indium doped ZnPc is fabricated in order to measure its electrical properties, its photo-current spectrum confirms the existence of phase transition. © (2013) Trans Tech Publications, Switzerland.