Nukeaw, Jiti

Preferred name

Nukeaw, Jiti

Alternative Name

Nukeaw, J.

Nukeaw, Jitti

Nukeaw, Jiji

Main Affiliation

Integrated Innovative Technology

jiti.nu@kmitl.ac.th

Now showing 1 - 10 of 20

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The innovative AlN-ISFET based pH sensor
(2008-10-06)
Bunjongpru, W.
;
Porntheeraphat, S.
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Trithaveesak, O.
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Somwang, N.
;
Khomdet, P.
This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f, magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (A1:O:N=52:18:30 %) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si<inf>3</inf>N<inf>4</inf>-ISFET devices. © 2008 IEEE.
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Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
(2016-11-25)
Khemasiri, N.
;
Jessadaluk, S.
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Chananonnawathorn, C.
;
Vuttivong, S.
;
Lertvanithphol, T.
In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
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UV-enhanced photodetector with nanocrystalline-TiO 2 thin film via CMOS compatible process
(2011-12-01)
Bunjongpru, W.
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Panprom, P.
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Porntheeraphat, S.
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Meananeatra, R.
;
Jeamsaksiri, W.
This research presents nanocrystal titaniumdioxide (nanocrystal-TiO <inf>2</inf>) film deposition technique with CMOS compatible process [1] to extend the optical response bandwidth of silicon based photodetecting devices toward ultraviolet range [2]. The thin films were initially deposited as Titanium Nitride (TiN) using DC magnetron reactive sputtering system. It was then annealed under nitrogen atmosphere at 800°C. After analyzing crystal structures and surface morphology with X-ray diffraction and FE-SEM systems, it was found that the deposited thin films showed the crystal phase of TiO <inf>2</inf> oriented along (200) plane of Rutile crystal structure with 50 nm grain size and increasing with film thickness. Using electroreflectance (ER) spectroscopy measurement [3], the bandgap of nanocrystal-TiO <inf>2</inf> was revealed to be 3.16 eV. PN-heterojunction photodiodes were fabricated with Nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si structures. Interdigitated aluminum structures were used as electrodes. By varying the thickness of nanocrystal-TiO <inf>2</inf> film, i.e. 30, 60, and 90 nm, the devices could response further into the UV range. The absorption edge wavelength investigated by photoresponse measurement was at 275 nm and shifting to the shorter wavelength as a function of the nanocrystal-TiO <inf>2</inf> grain size due to quantum confinement phenomenon [4]. The nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si photodetector had dark current = 5.31nA (2V), photocurrent = 0.9 uA, rise time = 58 us, fall time = 47 us at 30 nm thickness of TiO <inf>2</inf>. © 2011 IEEE.
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A disposable polydimethylsiloxane microdevice for DNA amplification
(2010-02-05)
Lekwichai, A.
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Porntheeraphat, S.
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Bunjongpru, W.
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Sripumkhai, W.
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Supadech, J.
In this study, we demonstrate the disposable polydimethylsiloxane (PDMS) microchip provided for DNA amplification. The device consists of two main parts. The first part is PDMS/glass stationary chamber, the other part is a temperature-control microdevice on SiO<inf>2</inf>/Si substrate. This device consists of a thin film Pt-microheater and a Pt-temperature sensor, which were fabricated with CMOS compatible process. The performance of the device in the DNA amplification shows that, with 10 μl of PCR mixture volume, the approximately 700 bp DNA were successfully amplified within 50 minutes by 30 PCR cycles. The amplified products were comparable with those of a conventional method using electrophoresis. The PCR chip is also suitable for mass production. © (2010) Trans Tech Publications.
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Silicon nitride thin films deposited by reactive gas-timing magnetron sputtering for protective coating applications
(2015-01-01)
Khemasiri, N.
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Paleeya, N.
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Sae-tang Phromyothin, D.
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Horprathum, M.
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Porntheeraphat, S.
Silicon nitride is a promising alternative to carbon based materials for protective coatings, owing to its compatibility with existing silicon-based microfabrication. The complexity of the fabrication processes and contaminations hamper fine-tuning to obtain desirable coating properties. We have explored the reactive gas-timing rf plasma sputtering technique for silicon nitride thin film deposition as an alternative method to fine-tune the film properties. The gas-timing technique controls the on-off sequence of the sputtering gas (Ar) and the reactive gas (N<inf>2</inf>) during deposition. We focus this investigation to the effect of the Ar:N<inf>2</inf> gas timing ratio (10:0, 10:1, 10:3, 10:5, 10:7 and 10:10) on the composition, the morphology, the corrosion resistance, and the hardness properties of the films, in comparison to the films deposited by conventional reactive sputtering with Ar-N<inf>2</inf> gas mixture. These deposited silicon nitride films were characterized by Auger electron spectroscopy, Raman spectroscopy, and atomic force microscopy. The chemical resistance was measured by the electrochemical corrosion test in sulfuric acid, while the hardness properties were obtained by nanoindentation. The results reveal that although the nitrogen content in the films increases only slightly when the N<inf>2</inf> timing is prolonged, the corrosive current of the films decreases abruptly. A thin passivating oxidized layer is found to play a major role in the corrosion resistance. In contrast, the hardness properties exhibit a uniform variation with the N<inf>2</inf> timing. The gas-timing sequence may induce morphological changes the underlying silicon nitride films. The highest hardness obtained by the gas-timing technique almost doubles that produced by the conventional mixed gas sputtering. Thus the reactive gas-timing technique suggests a new route to selectively control the properties of silicon nitride films with minor modification to existing microfabrication processes.
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Oxygen gas-timing control for variety properties of sputtered-ZnO
(2010-02-05)
Limwichean, K.
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Porntheeraphat, S.
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Bunjongpru, W.
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Panprom, P.
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Pankiew, A.
In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O<inf>2</inf>) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O <inf>2</inf> of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O<inf>2</inf> gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2θ = 34.4°. Furthermore, when the reactive time of O<inf>2</inf> was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ∼2.95 to ∼3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition. © (2010) Trans Tech Publications.
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Study of PDMS compounds using the adhesion force determined by AFM force distance curve measurements
(2010-02-05)
Vanitparinyakul, S.
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Pattamang, P.
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Chanhom, A.
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Tunhoo, B.
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Thiwawong, T.
The atomic force microscope(AFM) was used to perform surface force measurements in contact mode to investigate surface properties of model systems at the nanoscale. Three different Polydimethylsiloxane (PDMS) compounds were observed. The first consisted of pure PDMS, the second of PDMS blend with the nanoparticles Zinc Oxide(PDMS/ZnO) and the third of PDMS blend with the nanoparticles Zinc Oxide and toluene solvent(PDMS/ZnO/toluene), respectively. Surface morphology and the adhesion force were investigated by using atomic force microscopy. Force - distance curve measurement was performed in a contact mode, which used tip as silicon nitride. Moreover, we found a significantly different of the adhesion force when modified by nanoparticles ZnO and toluene solvent. © (2010) Trans Tech Publications.
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Tantalum oxide bio-photonics thin film grown by gas-timing innovation technique
(2013-09-18)
Khemasiri, N.
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Porntheeraphat, S.
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Horprathum, M.
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Chananonnawathorn, C.
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Bunjongpru, W.
Tantalum oxide (TaxOy) as high refractive index material has been grown on p-type silicon and quartz substrates by R.F. magnetron sputtering with our innovative technique called "reactive-gas timing". The reactive gas timing technique is an on-off time period sequence between argon (Ar) and oxygen (O2) plasma during sputtering process. The technique of gas-timing plays the effect on the properties of TaxOy thin film. The bombarded Ar-plasma was varied at 2, 5 and 8 sec, while the period of reactive O2-plasma was kept at 5 sec in this experiment. The physical and optical properties were investigated by using X-ray diffraction (XRD), Atomic Force Microscope (AMF), UV-Visible spectrometer and Spectroscopic Ellipsometer, respectively. The XRD spectra and AFM photographs show all films are amorphous phase with smooth feature. Meanwhile the transmittance of sputtered thin film decreases with 10% and the absorption edge shifts to lower energy with the increasing of the argon period from 2 sec to 8 sec. The refractive index as showed by ellipsometry slightly increases from 2.08 to 2.17 at wavelength 550 nm with the increasing of argon period from 2 sec to 8 sec. The increasing of the refractive index might dues to tantalum (Ta) rich which consists in thin films. The Ar-plasma period in the deposited film plays an important role on the properties of the TaxOy thin films especially as optical refractive index material. © 2013 SPIE.
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Nanocrystal-ZnO thin film deposition by a novel reactive gas-timing RF magnetron sputtering provided for UV photodetectors
(2010-02-05)
Panprom, P.
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Porntheeraphat, S.
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Bunjongpru, W.
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Tiwawong, T.
;
Yamwong, W.
The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO<inf>2</inf>/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O<inf>2</inf> were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO<inf>2</inf>/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact. © (2010) Trans Tech Publications.
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Non-enzymatic urea sensor using molecularly imprinted polymers surface modified based-on ion-sensitive field effect transistor (ISFET)
(2016-11-25)
Rayanasukha, Y.
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Pratontep, S.
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Porntheeraphat, S.
;
Bunjongpru, W.
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Nukeaw, J.
A novel molecularly imprinted electrochemical sensor based on ISFET device has been developed for urea detection sensor. The molecularly imprinted polymers (MIPs) were prepared by photopolymerization on the surface of ISFET device using PMMA and urea as the functional polymer and molecular template, respectively. The fabricated sensors were characterized by potentiometry and UV-Vis spectroscopy. The preparation conditions were optimized for performance of the sensors, i.e. drop-cast volume and incubation time. The MIP modified ISFET sensors has linear range response from 1.0 × 10− 4 to 1.0 × 10− 1 M with the limit of detection of 1.0 × 10− 4 M (S/N = 3). The MIP modified ISFET sensors also exhibit excellent reproducibility, repeatability and stability, as well as high selectivity to urea.

Nukeaw, Jiti

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