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Inductance simulation using GaAs MESFETs
Author(s)
Date Issued
December 1, 1998
Type
Article
Abstract
This paper proposes a method for an inductance simulation by using GaAs MESFET (Gallium Arsenide MEtal Semiconductor Field-Effect Transistor) devices. The realization method is based on the use of a GaAs voltage-to-current transducer and is also suitable for implementing in monolithic integrated circuit form. The circuit has wide bandwidth, good linearity and the simulated inductive reactance value is a linear function of resistor and capacitor. The PSPICE simulation results show that the properties of the circuit are in close agreement with the theoretical prediction.
Citation
IEEE Asia Pacific Conference on Circuits and Systems Proceedings, 275-278, 1998