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MAGFinFET: The channel length effect
Author(s)
Date Issued
July 1, 2020
Type
Conference Paper
Abstract
This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 1015 cm-3, the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.
Citation
Proceedings 2020 6th International Conference on Engineering Applied Sciences and Technology Iceast 2020, 2020