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Selective growth of CNT on Ni/Cu substrate

Author(s)
Phetchakul, Toempong
Chomnawang, Nimit
Cheirsirikul, Somsak
Nakachai, Ratthapong
Ratanaudomphisut, Eakkarach
Songsiriritthigul, Prayoon
Date Issued
August 28, 2007
Type
Conference Paper
DOI
10.1109/NEMS.2007.352123
Abstract
This paper presents a method for selective growth of CNT films. Specific areas for CNT growing were defined by patterning Ni electrodes on a Cu substrate using lithography process. CNT films were grown on the substrate by HFCVD method at atmospheric pressure using ethanol and hydrogen as sources. The films were examined and confirmed with SEM, Raman and EDX analysis. We observed that CNT only grow in selective areas of Ni. None can be grown on Cu background. This finding suggests a novel method of selective growth of CNT using Cu as a masking layer. Preliminary results also show possibility of growing CNT across the gaps between 3D interdigital Ni electrodes fabricated by LIGA technique. © 2007 IEEE.
Citation
Proceedings of the 2nd IEEE International Conference on Nano Micro Engineered and Molecular Systems IEEE NEMS 2007, 735-739, 2007
Subjects

3d electrodes

CNT selective growth

Cu masking

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