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The Study of Fabricated N-Type Diamond for Hall Sensor by Hot Filament Chemical Vapor Deposition (HFCVD) Method
Author(s)
Chanthep, Prasert
Panyalert, Wasin
Siriwongrungson, Vilailuck
Titiroongraung, Wisut
Date Issued
January 1, 2017
Type
Conference Paper
Abstract
In this research, the study of fabricated n-type diamond for Hall sensor by hot filament chemical vapor deposition (HFCVD) method is presented. The fabricated n-type diamond film doped with phosphorus in ethanol (C2H5OH) at P/C ratio of 10,000 ppm was synthesis on silicon substrate at 750 °C for 12 hours. Its morphology, crystallinity and types of carbon were analyzed using optical microscope and Raman spectroscope. The structure of n-type diamond for Hall Sensor comprises of four silver paste electrodes on the surface of the fabricated n-type diamond film. An electrical property of electrode, Ohmic, was tested on the fabricated silver paste electrodes. The impact of temperature on the fabricated n-type diamond for Hall sensor was evaluated. The operating temperature as high as 240 °C was observed. Magnetic response characteristic of the fabricated n-type diamond was measured. The absolute sensitivity of 9 µV/Gauss was observed. Properties of the fabricated n-type diamond for Hall sensor under operation were measured. The electrical density is 1.82 x 1015 cm-3, electrical resistance is 5.443 ?·cm and electrical mobility is 630 cm2/v-sec.
Citation
Lecture Notes in Engineering and Computer Science, 2228, 741-744, 2017
Subjects