Atiwongsangthong, Narin

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Alternative Name

Atiwongsangthong, N.

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School of Engineering

narin.at@kmitl.ac.th

Now showing 1 - 10 of 34

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Nanoporous silicon metal-semiconductor-metal visible light photodetector
(2010-01-01)
Atiwongsangthong, Narin
In this research, we present the study on the application of nanoporous silicon for optoelectronic device which called nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector in this paper. This device was fabricated on nanoporous silicon layer which was formed by electrochemical etching of silicon wafer in hydrofluoric acid solution under various anodization condition such as the resistivity of silicon wafer, current density, concentration of hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study on photoresponse and responsetime of nanoporous silicon MSM photodetector which was fabricated on various porosity of nanoporous silicon layer. It is found that when devices fabricated on higher porosity nanoporous silicon layer, the photoresponse of device will expand toward the short-wavelength and bandwidth of spectum response will cover visible light. In addition, it is found that responsetime of device decreases. ©ICROS.
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Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector
(2024-01-01)
Muanghlua, Rangson
;
Atiwongsangthong, Narin
;
Vijafun, Jidapa
;
Suttijalern, Kamonwan
;
Niemcharoen, Surasak
In this paper, the porous silicon formation on pyramid surface in U-shape MSM photodetector was studied. Stain etching technique was used to prepare porous silicon material. The solution for stain etching contained the mixed solution of hydrofluoric acid (HF), nitric acid (HNO<inf>3</inf>) and deionized water (DI) with ratios 1: 3: 5 and used halogen lamp expouse 30,000 lux between etching for excite porous formation in 2 minutes. Porous silicon was fabricated on pyramid surface in U shape which between metal electrode titanium and aluminum on p-type silicon 20-25 Ω-cm to reduce the reflection of incident light and to increase a photocurrent of MSM photodetector. In the final part of this paper are the comparison physical morhhology and electrical characteristic of porous silicon on pyramid surface in U shape MSM photodetector with pyramid in U-shape MSM photodetector without porous silicon on the surface and planar MSM photodetector. The physical morphology of porous silicon on pyramid surface in U-shape was studied by using scanning electron microscopy (SEM). The electrical characteristic was investigated by using incident light with wave length 635 nm and power 6 mW at bias voltage 10 V. The result of comparison, we found that porous silicon on the surface of pyramid in U-shape MSM photodetector is rougher than pyramid in U-shape MSM photodetector without porous silicon on the surface. The electrical characteristic of porous silicon on pyramid surface in U-shape MSM photodetector respond incident light higher than pyramid in U-shape MSM photodetector without porous silicon on the surface. Therefore the forming porous silicon on the suface of pyramid in U-shape MSM photodetector is appropriate for the fabrication of MSM photodetector with high photocurrent.
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Investigations of nanostructure and photoluminescence properties of nanoporous silicon
(2013-10-04)
Atiwongsangthong, Narin
In this paper, the nanoporous silicon layer was formed by electrochemical etching of silicon wafer in hydrofluoric acid solution. The purpose of this research, the nanoporous silicon layer were investigated the nanostructure and photoluminescence properties. We report the investigation on nanostructure of nanoporous silicon by using SEM, the gravimetric and fourier transform Raman spectroscopy (FT-Raman) technique. It is found that increasing the constant current density between electrochemical etching have effect to increasing porosity of nanoporous silicon. And increasing porosity of nanoporous silicon is effect from decreasing average size of silicon crystallites in nanoporous silicon which can confirm with Raman spectroscopy. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during nanoporous silicon stored in various ambient gases such as air, nitrogen, oxigen and vacuum. From data of this experiment when nanoporous silicon were stored in ambient air for a long time, the photoluminescence intensity of nanoporous silicon will decrease. In addition, we found strongly decreasing in its photoluminescence intensity when nanoporous silicon were stored in ambient of oxygen which can confirm by using fourier transfrom infrared spectroscopy (FT-IR) technique. © (2013) Trans Tech Publications, Switzerland.
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Effect of Forming Porous Silicon with Different Electrochemical Etching Cell to Porosity Layer Under Various Anodization Current Density
(2017-01-01)
Intasom, Jiramet
;
Atiwongsangthong, Narin
In this research is purpose to study effect of forming porous silicon with different electrochemical etching cell to porosity layer under various anodization current density (10, 15, 20 and 25 mA/cm<sup>2</sup>). Three method of forming porous silicon were prepared by forming in single tank electrochemical etching cell without coating Al at backside of silicon wafer, forming in single tank electrochemical etching cell with coating Al at backside of silicon wafer and forming in double tank electrochemical etching cell without coating Al at backside of silicon wafer. After that investigate porous silicon by test photoluminescence with irradiate UV- Light on samples. The porosity of porous silicon was measure by gravimetric method. The result was found that the porous layer from forming by double tank electrochemical etching cell without coating Al at backside are most homogeneity and porosity of porous silicon are increase with the increase of current density.
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Defects study by activation energy profile for lowering leakage current in p-n junction
(2011-01-01)
Srithanachai, Itsara
;
Ueamanapong, Surada
;
Rujanapich, Poopol
;
Atiwongsangthong, Narin
;
Niemcharoen, Surasak
Diode leakage current consists of diffusion (I<inf>d</inf>) and generation current (I<inf>g</inf>), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E<inf>a</inf>). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current-voltage (I -V) and capacitance- voltage (C-V) measurements of diodes. The I<inf>g</inf> can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E<inf>a</inf>) is derived from slope of an Arrhenius plot of I<inf>g</inf>. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E<inf>a</inf> profile below junction has been shown. The lower E<inf>a</inf> value has been found near the junction, which may relate to the junction implantation. © (2011) Trans Tech Publications.
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Interdigitated Extended Gate Field Effect Transistor for pH Sensor Based on Porous Silicon Layer
(2025-01-01)
Atiwongsangthong, Narin
Study introduces a pH sensor utilizing an interdigitated extended gate field-effect transistor (IEGFET) structure, incorporating a porous silicon (PS) layer. The PS layer was created via electrochemical etching on p-Type <100> silicon wafers, apply current density of 10 mA/cm2 in a 48% HF solution for a duration of 10 minutes. Surface characteristics of the resulting PS layer were examined through scanning electron microscopy (SEM). The sensor integrates this PS layer with a standard N-MOSFET, forming the IEGFET configuration. Due to increasing surface area inherent in porous structure, device demonstrated improved pH sensitivity and response linearity. The sensing capability was tested across pH levels 4, 7, and 10. Results revealed a current mode sensitivity of 0.7636 μA2/pH and a linearity of 99.89%. Voltage mode sensitivity of 53.5 mV/pH and a linearity of 99.86%. These findings validate porous silicon as an excellent for efficient and reliable pH sensing.
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Alcohol vapor detection by using nanoporous silicon as based sensor
(2013-01-01)
Atiwongsangthong, Narin
;
Niemcharoen, Surasak
In this paper, we are concerned with fabrication of alcohol vapor sensor based on nanoporous silicon. In order to use nanoporous silicon as alcohol vapor sensor, we made nanoporous silicon onto p-type silicon wafer by electrochemical etching of silicon wafer in hydrofluoric acid solution. The structure of this sensor consists of nanoporous silicon layer and aluminum electrode which is deposited on the top of nanoporous silicon layer by evaporator. In this research, we are concerned the variation of electrical properties of this sensor due to presence of different concentration of alcohol vapor. From the experiment, it is found that this sensor can detect the different concentrations of alcohol vapor in the rang 1000 ppm to 250 ppm.
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Nanoporous silicon metal-semiconductor-metal photodetector
(2010-01-01)
Atiwongsangthong, N.
;
Niemcharoen, S.
;
Titiroongruang, W.
In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor- metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device in terms of rise time will decrease. © 2010 World Scientific Publishing Company.
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Synthesis of monodispersed perovskite barium zirconate (BaZrO3) by the sonochemical method
(2013-01-01)
Charoonsuk, Piyanut
;
Baitahe, Rattanai
;
Vittayakorn, Wanwilai
;
Atiwongsangthong, Narin
;
Muanghua, Rangson
Barium zirconate (BaZrO<inf>3</inf>) was synthesized successfully by the sonochemical method. The monophase of BaZrO<inf>3</inf> was formed completely in short irradiation time without the calcination process. X-ray diffraction, Fourier transform and Raman spectroscopy were used to characterize formation of the perovskite BaZrO<inf>3</inf> phase, which occurs in a 60 minute single phase with a cubic crystal structure at room temperature. Therefore, sonochemical irradiation could accelerate the formation of BaZrO<inf>3</inf> particles significantly. Furthermore, scanning electron microscopy investigated the uniform shape and size. The size distribution became narrow with increasing time, as a function of irradiation. © 2013 Copyright Taylor and Francis Group, LLC.
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Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature
(2011-08-12)
Kiddee, Kunagone
;
Ruangphanit, Anucha
;
Niemcharoen, Surasak
;
Atiwongsangthong, Narin
;
Muanghlua, Rangson
This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25°C-125°C of NMOS device. The relation of I<inf>DS</inf> and V<inf>GS</inf> in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5×10<sup>-10</sup> m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Ω-μm/°C. The errors between the predicted model and measured of I<inf>DS</inf>&V <inf>GS</inf> in linear region is approximately 3%. © 2011 IEEE.

Atiwongsangthong, Narin

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