Atiwongsangthong, Narin

Preferred name

Alternative Name

Atiwongsangthong, N.

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School of Engineering

narin.at@kmitl.ac.th

Now showing 1 - 10 of 34

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A planar nanoporous silicon metal-semiconductor-metal visible light photodetector
(2013-11-01)
Atiwongsangthong, Narin
In this work, the nanoporous silicon layer is prepared through the simple electrochemical etching of p-type crystalline silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The gravimetric method and SEM images have been used to characterize the morphological on the various porosity of nanoporous silicon layer. Two square Al Schottky contacts were thermally deposited on the nanoporous silicon layer with the electrode spacing is 500 μm to form a planar nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. In experiment, we investigated photoresponse and the response time of a planar nanoporous silicon MSM visible light photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the shorter-wavelengths and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device decreases. © 2013 American Scientific Publishers All rights reserved.
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Improvement of independent directional magnetic field measurement technique with Hall sensors
(2013-11-04)
Mano, Athirot
;
Atiwongsangthong, Narin
;
Titiroongruang, Wisut
The independent directional magnetic field measurement is a new technique for magnetic flux density measurement with high accuracy. This technique can reduce the limitation in term of angle that magnetic flux lines interact with Hall sensors. However, the original system limits the uniformity and symmetry of magnetic field patterns, which can cause an error for measurement system. Therefore, the aim of this research is to present the method to increase measurement accuracy of system, by improve magnetic field uniformity which can be done by using electromagnet instead of permanent magnet. The system is also improved the mechanical circle motion by using stepping motor, it is used to rotate Hall sensors in magnetic field which is generated by electromagnet. The result from experiment has shown of this method that can reduce the error percentage as 5% compare with original system. This method is shown 0.99997 of coefficient of determination, which represents to accuracy in magnetic flux density measurement range 0-1350 Gauss. © (2013) Trans Tech Publications, Switzerland.
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Porous Silicon Sensing Membrane Electrode on Extended Gate Field Effect Transistor for pH Sensor
(2023-01-01)
Atiwongsangthong, Narin
;
Ausama, Atthawit
;
Buakaew, Seangrawee
In this paper, we used porous silicon as sensing membrane electrode which were formed by using anodization etching process at room temperature. Porous silicon sensing membrane electrode will be combined working with commercial N-MOSFET which used as the extended gate field effect transistor (PS-EGFET) for pH sensor. P-Type silicon wafer was used as material substrate for prepare porous silicon sensing membrane electrode. Anodization parameters, the current density of 10 mA/cm2, with 48% hydrofluoric acid concentration and etching time of 10 minutes. The pH sensing of porous silicon EGFET were measured in pH value of 4, 7 and 10, respectively. From experiment, the porous silicon EGFET were exhibited high pH sensitivity on current mode in relationship between the drain current with pH value was $0.2929\ \mu\mathrm{A}^{1/2}/\text{pH}$, corresponding to the linearity of 99.72%. And, pH sensitivity on voltage mode in relationship between reference voltage with pH value was 34.8 mV/pH, corresponding to the linearity of 99.78%. The experiment results showed that the porous silicon was suitable sensing membrane material for pH sensor.
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A novel power output model for photovoltaic system
(2017-10-19)
Kittisontirak, Songkiate
;
Dawan, Promphak
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Atiwongsangthong, Narin
;
Titiroongruang, Wisut
;
Chinnavornrungsee, Perawut
This paper proposed the novel concept model for forecasting the PV power output. The model was used two meteorology to input model which are solar irradiance and module temperature. This model was improve the accuracy of model from simplified model is 1D5P by using the weight function. The proposed model was verified by comparison with measured data. The results showed that the model has high accuracy. The RMSE ranges from 0.02 to 0.07 and average RMSE is 0.04.
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Application of chicken eggshell waste as a starting material for synthesizing calcium niobate (Ca4Nb2O9) powder
(2015-07-01)
Kamkum, Phonphan
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Atiwongsangthong, Narin
;
Muanghlua, Rangson
;
Vittayakorn, Naratip
This study focused on the possibility of using CaCO<inf>3</inf> from chicken eggshell waste as a starting material for synthesizing Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> powder via a conventional solid state reaction. The heat behavior of CaCO<inf>3</inf> and Nb<inf>2</inf>O<inf>5</inf> raw material mixture was studied by thermogravimetric analysis (TGA). Phase formation of Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> was studied as a function of calcination conditions by Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy and X-ray diffraction (XRD). The morphology and microstructure were charaterized via Scanning electron microscope (SEM). The X-ray fluorescence (XRF) results showed that the chicken eggshell contained more than 96.0% of CaCO<inf>3</inf> by weight. The XRD pattern peaks matched the peaks of calcite CaCO<inf>3</inf> ICDD No. 85-11108 very well. Furthermore, the XRD results and Rietveld refinement analysis confirmed that the purity and single phase of Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> corresponded to the monoclinic structure (ICDD: 49-0911) obtained after the calcination process. The non-isothermal kinetic of Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> also was investigated by the Ozawa methods. This study indicated that CaCO<inf>3</inf> from chicken eggshell waste is an alternative starting material for synthesizing Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> powder.
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Nanoporous silicon metal-semiconductor-metal visible light photodetector
(2010-01-01)
Atiwongsangthong, Narin
In this research, we present the study on the application of nanoporous silicon for optoelectronic device which called nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector in this paper. This device was fabricated on nanoporous silicon layer which was formed by electrochemical etching of silicon wafer in hydrofluoric acid solution under various anodization condition such as the resistivity of silicon wafer, current density, concentration of hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study on photoresponse and responsetime of nanoporous silicon MSM photodetector which was fabricated on various porosity of nanoporous silicon layer. It is found that when devices fabricated on higher porosity nanoporous silicon layer, the photoresponse of device will expand toward the short-wavelength and bandwidth of spectum response will cover visible light. In addition, it is found that responsetime of device decreases. ©ICROS.
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Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
(2013-08-30)
Nararug, Budsara
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Srithanachai, Itsara
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Ueamanapong, Surada
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Khunkhao, Sanya
;
Janprapha, Supakorn
This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.
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Study on structure and optical properties of thin-film zinc oxide spin coating under the conditions of annealing temperature of zinc acetate dihydrate
(2018-01-01)
Pornprasit, Weerachai
;
Atiwongsangthong, Narin
In this research we investigated the effect of anneal temperature change on the structure and optical properties of thin zinc oxide film by rotating sol-gel coating on glass substrate. 300°C, 400°C, 500°C and 600°C respectively. Crystal structure analysis with X-ray diffractometer Scherrer equation was used to determine the size of the crystals. The size of the crystals was 30-48 nm. The surface of the film was scanned by scanning electron microscope. Analysis of optical properties with UV spectrometer. It was found that the effect of anneal temperature variation on the light transmission and absorption of the film was 80-90%. The wavelength ranges from 300 to 375 nm. Finally, the gap between the energy bands is between 3.20 and 3.24 electron volts(eV).
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Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector
(2024-01-01)
Muanghlua, Rangson
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Atiwongsangthong, Narin
;
Vijafun, Jidapa
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Suttijalern, Kamonwan
;
Niemcharoen, Surasak
In this paper, the porous silicon formation on pyramid surface in U-shape MSM photodetector was studied. Stain etching technique was used to prepare porous silicon material. The solution for stain etching contained the mixed solution of hydrofluoric acid (HF), nitric acid (HNO<inf>3</inf>) and deionized water (DI) with ratios 1: 3: 5 and used halogen lamp expouse 30,000 lux between etching for excite porous formation in 2 minutes. Porous silicon was fabricated on pyramid surface in U shape which between metal electrode titanium and aluminum on p-type silicon 20-25 Ω-cm to reduce the reflection of incident light and to increase a photocurrent of MSM photodetector. In the final part of this paper are the comparison physical morhhology and electrical characteristic of porous silicon on pyramid surface in U shape MSM photodetector with pyramid in U-shape MSM photodetector without porous silicon on the surface and planar MSM photodetector. The physical morphology of porous silicon on pyramid surface in U-shape was studied by using scanning electron microscopy (SEM). The electrical characteristic was investigated by using incident light with wave length 635 nm and power 6 mW at bias voltage 10 V. The result of comparison, we found that porous silicon on the surface of pyramid in U-shape MSM photodetector is rougher than pyramid in U-shape MSM photodetector without porous silicon on the surface. The electrical characteristic of porous silicon on pyramid surface in U-shape MSM photodetector respond incident light higher than pyramid in U-shape MSM photodetector without porous silicon on the surface. Therefore the forming porous silicon on the suface of pyramid in U-shape MSM photodetector is appropriate for the fabrication of MSM photodetector with high photocurrent.
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Ambient Gases Sensing by Photoluminescence Properties of Porous Silicon
(2022-01-01)
Buakaew, Seangrawee
;
Ausama, Atthawit
;
Atiwongsangthong, Narin
Ambient gas sensing was responced by photoluminescence intensity properties of porous silicon. Silicon wafer was used as starting material for porous silicon samples, anodization etching process was used to prepare porous silicon layer on p-type silicon substrate. Anodization parameters, the current etchings used between 10 to 40 mA/cm2, with 48% hydrofluoric acid concentration and etching time of 10 minutes. The porous silicon structure were described by using SEM and the porosity of samples by gravimetric technique. The samples were applied as ambient gas sensing were described by photoluminescence intensity at room temperature. The bad of photoluminescence intensity when porous silicon was stored in oxygen ambient gas and the best of photoluminescence intensity was to vacuum.

Atiwongsangthong, Narin

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