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A new mismatch model of temperature and narrow channel width dependence on threshold voltage of MOSFETs
Author(s)
Date Issued
January 1, 2014
Type
Conference Paper
Abstract
A new mismatch model of temperature and narrow channel dependence on threshold voltage of MOSFETs and the parameter extraction method are proposed. A new model is developed from spice level3 and BSIM3 model. The IDS -VGS in linear region was used with a different of channel width. The threshold voltage parameters extraction procedure is based on the measurement of the tranconductance characteristics of MOSFET in linear region. In this predicted model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET at various narrow channel width of MOSFET are determined. The results show that the deviations of experimentally measured threshold voltages of both devices from the predicted model are around 3%. © (2014) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 931-932, 984-988, 2014