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Growth and characterization of Ni3FeN thin films by reactive gas timing RF magnetron sputtering
Author(s)
Date Issued
May 5, 2010
Type
Conference Paper
Abstract
Ni3FeN films were deposited on the glass substrate at room temperature by reactive gas timing rf magnetron sputtering, with two conditions: (1) a time period of Ar:N2 gas (2) a flow rate of Ar:N2 gas. Our results show that sputter rate increase with increasing of a time period and the rate of Ar:N2 gas. The crystal structure of thin films was investigated by x-ray diffraction show fcc structure of Ni3FeN (200) plane. The lattice constants increase with increasing of the flow rate of the nitrogen gas but it decrease with increasing of a time period of Ar gas. The grain size of thin films were investigated by atomic force microscope show the size range between 20-120 nm. ©2010 IEEE.
Citation
Inec 2010 2010 3rd International Nanoelectronics Conference Proceedings, 1151-1152, 2010