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  4. Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering
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Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

Author(s)
Panyajirawut, Pongladda
Pratumsuwan, Nattha
Meesombad, Kornkamon
Thanawattana, Kridsana
Chingsungnoen, Artit
Boonyopakorn, Narongchai
Aiempanakit, Montri
Pecharapa, Wisanu
Date Issued
January 1, 2017
Type
Conference Paper
DOI
10.1016/j.matpr.2017.06.132
Abstract
Thin films of cobalt-doped ZnO were prepared by DC magnetron sputtering on glasses. The cobalt dopant concentration was at 3%wt. The sputtering power was set at 200 watts and sputtered for 20 mins. All films are transparent. The films were then annealed at 100-500 °C under air atmosphere. Crystal structural and optical properties of the films were characterized by XRD and UV-Vis, respectively. The XRD patterns show peaks corresponding to (002) plane indicate thin films obtain hexagonal wurtzite structure. The effects of annealing temperature on crystal structure and optical properties were discussed.
Citation
Materials Today Proceedings, 4(5), 6311-6316, 2017
Subjects

anneal

cobalt-doped ZnO

sputtering

thin films

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