High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density

Poyai, A.; Bunjongpru, W.; Klunngien, N.; Porntheerapat, S.; Hruanan, C.; Sopitpan, S.; Nukeaw, J.

doi:10.1016/j.mssp.2008.07.012

High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density

Author(s)

Poyai, A.

Bunjongpru, W.

Klunngien, N.

Porntheerapat, S.

Hruanan, C.

Sopitpan, S.

Nukeaw, J.

Date Issued

October 1, 2008

Type

Article

DOI

10.1016/j.mssp.2008.07.012

Abstract

This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725 nm have been prepared on metal-dielectric-metal structure with substrate temperature below 100 °C. Capacitance versus bias voltage has been measured. The dielectric constant of AlON has been calculated from the slope of the plot of capacitance versus capacitor area. The value of 11 has been obtained from this study. This depends on the composition of the AlON material, which is analyzed by Auger electron spectroscopy. © 2008 Elsevier Ltd. All rights reserved.

Citation

Materials Science in Semiconductor Processing, 11(5), 319-323, 2008

Subjects

Aluminum oxynitride (...

Metal-dielectric-meta...

RF gas-timing sputter...