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Extraction of BSIM3V3 junction capacitance model of nMOSFET in VLSI: Devices,circuits and systems
Author(s)
Date Issued
July 2, 2018
Type
Conference Paper
Abstract
An extraction methodology and modeling of BSIM3v3 junction capacitance of NMOSFET in VLSI is proposed. In this paper, the extraction can lead to an improved accuracy on p-n junction capacitance. This methodology can extract parasitic capacitance due to bottom area junction and side-wall capacitance components at the field oxide side and gate oxide side. The capacitance model parameters in BSIM3v3 are proposed also. The manual calculation was used for the extraction methodology. A comparison is made to checking the accuracy of the capacitance models. The results show that a good agreement was found.
Citation
Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 201-204, 2018