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Effect of Forming Porous Silicon with Different Electrochemical Etching Cell to Porosity Layer Under Various Anodization Current Density
Author(s)
Intasom, Jiramet
Date Issued
January 1, 2017
Type
Conference Paper
Abstract
In this research is purpose to study effect of forming porous silicon with different electrochemical etching cell to porosity layer under various anodization current density (10, 15, 20 and 25 mA/cm2). Three method of forming porous silicon were prepared by forming in single tank electrochemical etching cell without coating Al at backside of silicon wafer, forming in single tank electrochemical etching cell with coating Al at backside of silicon wafer and forming in double tank electrochemical etching cell without coating Al at backside of silicon wafer. After that investigate porous silicon by test photoluminescence with irradiate UV- Light on samples. The porosity of porous silicon was measure by gravimetric method. The result was found that the porous layer from forming by double tank electrochemical etching cell without coating Al at backside are most homogeneity and porosity of porous silicon are increase with the increase of current density.
Citation
Lecture Notes in Engineering and Computer Science, 2228, 756-759, 2017