Merged three-terminal magnetotransistor based on the carrier Recombination-Deflection effect

Leepattarapongpan, Chana; Penpondee, Naritchapan; Phetchakul, Toempong; Phengan, Weera; Chaowicharat, Eakalak; Hruanun, Charndet; Poyai, Amporn

doi:10.1109/ICSENS.2008.4716463

Merged three-terminal magnetotransistor based on the carrier Recombination-Deflection effect

Author(s)

Leepattarapongpan, Chana

Penpondee, Naritchapan

Phetchakul, Toempong

Phengan, Weera

Chaowicharat, Eakalak

Hruanun, Charndet

Poyai, Amporn

Date Issued

December 1, 2008

Type

Conference Paper

DOI

10.1109/ICSENS.2008.4716463

Abstract

This article presents a merged three terminals magnetotransistor based on the carrier recombination - deflection effect. This particular magnetotransistor structure relies on the combination of difference of base current and collector current in +x and -x directions. As a result, the output voltage and absolute sensitivity to magnetic field will be double. The structure of magnetotransistor consists of oneemitter, two collector and two base contacts. The devices can detect magnetic field in vertical direction (BZ) by relying on the difference between base current and collector current (°ICB). From the experiment, with emitter current at 5, 8, and 10 mA, the magnetotransistor had the highest sensitivity of 1.125mV/mT when emitter current was at 10 mA. © 2008 IEEE.

Citation

Proceedings of IEEE Sensors, 399-402, 2008