Intrinsic Enhancement of Permittivity with Ultralow Dielectric Loss in Donor-Acceptor Co-Doped Rutile TiO2 Ceramics

Abstract

The immense potential of colossal dielectric materials for use in high-energy-density storage applications has driven much recent development and research. The discovering of such dielectric materials with the required high permittivity and low dielectric loss is still a highly challenging. Herein, the donor-acceptor co-doped TiO2 has been developed based on (Mg0.5W0.5) x Ti1-x O2, (In0.5W0.5) x Ti1-x O2 and (Ni0.5Nb0.5) x Ti1-x O2; where x = 0.005–0.01, that manifests high permittivity (>104). The resulted permittivity attains the quadruple than that of pure TiO2 ceramic with low dielectric loss of ∼0.02 over a broad temperature range. This performance is corresponded to the electron-pinned defect-dipoles, providing the extra dielectric response to those of rutile TiO2 host ceramics. This research offers the way to develop functional colossal-dielectric materials by engineering complex defects into the bulk that will help for further discovery of promising new dielectric materials in future.