Roentgen radiation response in P-N semiconductor device

Radiation is an important for investigate semiconductor device process improvement area. Currently, radiation use for many areas in semiconductor device and one of application use semiconductor device for detector. However, radiation is one of part of cure process in semiconductor area although radiation has high energy and may impact to semiconductor device performance. The experiment of radiation exposed on semiconductor device investigate radiation impact area on device by COMSOL simulation before fabricate semiconductor diode. COMSOL results show high temperature on active area of semiconductor device while exposed with SRFE process that may impact to device mechanism and electrical properties of device.