Merged three-terminal magnetotransistor based on the carrier Recombination-Deflection effect

Abstract

This article presents a merged three terminals magnetotransistor based on the carrier recombination - deflection effect. This particular magnetotransistor structure relies on the combination of difference of base current and collector current in +x and -x directions. As a result, the output voltage and absolute sensitivity to magnetic field will be double. The structure of magnetotransistor consists of oneemitter, two collector and two base contacts. The devices can detect magnetic field in vertical direction (BZ) by relying on the difference between base current and collector current (°ICB). From the experiment, with emitter current at 5, 8, and 10 mA, the magnetotransistor had the highest sensitivity of 1.125mV/mT when emitter current was at 10 mA. © 2008 IEEE.