Publication:
Fabrication, characterization and analysis of ITO/n-Si Schottky photodetector

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Date

2010-07-30

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Abstract

In this article, we have studied contact between indium tin oxide (ITO) and n-type silicon. First, the characteristics of ITO thin films have been identified. The films have high transparent and low resistivity (∼88 % of transmittance and 2.8×10-3 Ω-cm). Fabrication of the ITO/n-Si photodetector was presented which was ITO thin layer deposited on 10 Ω-cm resistivity silicon wafer by R.F. sputter method. Finally, a study of characteristics of the photodetector such as I-V characteristics, C-V characteristics, and frequency response has been done. The photodetectors have built in voltage (Vbi) about 0.26 V, the dark current of 5 μA and light current of 1.5 mA at 25,000 lux, 5V. Capacitance and frequency response are about 110 pF and 120 kHz, respectively.

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Fast fourier transform (FFT), Frequency response, Photodetector

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Ecti Con 2010 the 2010 Ecti International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 776-779, 2010

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https://dspace.kmitl.ac.th/handle/123456789/3120

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