Theoretical study of electronic structure and thermoelectric properties of doped CuAlO 2

Abstract

The doping level dependence of thermoelectric properties of delafossite CuAlO 2 has been investigated in the constant scattering time (τ) approximation, starting from the first principles of electronic structure. In particular, the lattice parameters and the energy band structure were calculated using the total energy plane-wave pseudopotential method. It was found that the lattice parameters of CuAlO 2 are a = 2.802 Å and c = 16.704 Å, and the internal parameter is u = 0.1097. CuAlO 2 has an indirect band gap of 2.17 eV and a direct gap of 3.31 eV. The calculated energy band structures were then used to calculate the electrical transport coefficients of CuAlO 2. By considering the effects of doping level and temperature, it was found that the Seebeck coefficient S(T) increases with increasing acceptor doping (A d) level. The values of S(T) in our experiments correspond to an A d level at 0.262 eV, which is identified as the Fermi level of CuAlO 2. Based on our experimental Seebeck coefficient and the electrical conductivity, the constant relaxation time is estimated to be 1 × 10 -16 s. The power factor is large for a low A d level and increases with temperature. It is suggested that delafossite CuAlO 2 can be considered as a promising thermoelectric oxide material at high doping and high temperature. © 2010 TMS.