The effect of X-ray irradiation on the electrical properties of pt-doped P-N diode

Abstract

This paper presents the effect of X-ray irradiation on the electrical properties of Pt-doped P-N diode with X-ray energy 70 keV for 205 seconds. The results show that the radiation affected both reverse and forward current characteristics of P-N diode. The forward current is increased about 3 orders after radiation, while the leakage current is increased slightly after irradiation. Moreover, build-in voltage value is also changed after irradiation. The cause of parameters changing can be analyzed from carrier lifetime and series resistance. It can be seen clearly that Xray irradiation technique are significant and can be used to improving electronic devices. © (2013) Trans Tech Publications Switzerland.