Effect of substrate depth to 5-contact vertical hall

Abstract

We studied the flve-contact vertical Hall device using TCAD at various depth of substrate. Two main mechanisms of Hall voltage are induced voltage from Lorentz's force and differential current. At low depth, the percentage of voltage from Lorentz's force is much greater than the voltage from differential current. The depth does not only affect Hall voltage by Lorentz's force but also affect contact differential current. The Hall voltage and sensitivity of device are increased with substrate depth until the critical value. The sensitivity of device is saturation when the substrate depth is more than 70 μm. The output voltage from differential current is 45% of overall output voltage at saturation condition.