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"Backward diode" characteristics of p-type diamond/n-type silicon heterojunction diodes
Author(s)
Date Issued
January 1, 1996
Type
Article
Abstract
Rectification characteristics obtained for p-type diamond/n-type silicon heterojunctions have been studied. The current-voltage (I-V) characteristics of p-n heterojunctions show the same manner of rectification as in a backward diode. Forward current depends on both the concentration of boron atoms in polycrystalline diamond and the ambient temperature. The temperature dependence of I-V characteristics indicated that forward and reverse currents are mainly ascribed to diffusion and tunnelling currents, respectively. This current flow mechanism is peculiar to a backward diode. A simplified energy band model was proposed to explain the current transport mechanism in these heterojunctions. The experimental results can be explained with the aid of the proposed energy band model.
Citation
Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers, 35(8), 4247-4252, 1996