The innovative AlN-ISFET based pH sensor

Bunjongpru, W.; Porntheeraphat, S.; Trithaveesak, O.; Somwang, N.; Khomdet, P.; Jeamsaksiri, W.; Hruanun, C.; Poyai, A.; Nukeaw, J.

doi:10.1109/ECTICON.2008.4600559

The innovative AlN-ISFET based pH sensor

Author(s)

Bunjongpru, W.

Porntheeraphat, S.

Trithaveesak, O.

Somwang, N.

Khomdet, P.

Jeamsaksiri, W.

Hruanun, C.

Poyai, A.

Nukeaw, J.

Date Issued

October 6, 2008

Type

Conference Paper

DOI

10.1109/ECTICON.2008.4600559

Abstract

This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f, magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (A1:O:N=52:18:30 %) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si3N4-ISFET devices. © 2008 IEEE.

Citation

5th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2008, 2, 833-836, 2008