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Current voltage and capacitance voltage characteristics of dual channel high electron mobility transistor
Author(s)
Date Issued
December 1, 1999
Type
Conference Paper
Abstract
In this paper, the current and the capacitance voltage characteristics of a dual channel high electron mobility transistor(DC-HEMT) are presented. The model uses a single analytical charge expression to describe four different charge components: two dimensional electron gas on the top and bottom channels, free electrons and neutralized donors in AlGaAs. The current voltage characteristics includes the effect of the parasitic source and drain resistances, the mobility degradation and channel length modulation through a quasi two dimensional Poisson equation. The capacitance-voltage expression is obtained through the summation of the variation of each charge component with respect to the variation of the gate voltage. Theoreticai predictions of the model are compared with the experimental data and found to be in good agreement.
Citation
International Symposium on IC Technology Systems and Applications, 8, 26-29, 1999